Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Alhalaili, Badriyah; Vidu, Ruxandra; Mao, Howard; Islam, M. Saif

doi:10.3390/nano10101920

Cited by 6 publications

(11 citation statements)

References 36 publications

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“…However, the "β" phase Ga 2 O 3 has had much attention as an excellent material for gas sensors [5], power devices [6], catalysis [7], and transparent conducting materials [8] due to its availability of single-crystalline substrates, high thermal and chemical stability, lower power loss, high electric breakdown field strength, controllability of conductivity, and high transparency in the visible region [9,10]. In addition, recently, Alhalaili et al (2020) studied the morphological characteristics of β-Ga 2 O 3 nanowires grown on different substrates with different temperatures and reported the suitable conditions to grow high-density unform β-Ga 2 O 3 nanowires on Si substrates [11]. The p-type doping is still a significant obstacle to the device application.…”

Section: Introductionmentioning

confidence: 99%

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

et al. 2021

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One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.

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Section: Introductionmentioning

confidence: 99%

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

et al. 2021

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“…It is important to note that high nitrogen (N 2 ) pressure (1-2 GPa) and high temperature (1400-1500 • C) is necessary to drive the reaction between Ga and N 2 to form GaN [49], which was not achieved in our experiments. In addition, our material characterization using XRD and XPS did not show the presence of elemental N or GaN [50].…”

Section: The Growth Mechanism Of Ga2o3 Nanostructuresmentioning

confidence: 70%

Novel Approach to Synthesize Nanostructured Gallium Oxide for Devices Operating in Harsh Environmental Conditions

et al. 2021

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The importance of Ga2O3-based material for harsh environmental applications has attracted the interest of researchers in exploring various fabrication and growth techniques of Ga2O3-based nanomaterials using effective and low-cost processes. Herein, a demonstration to improve the wettability of liquid gallium on a rough silicon surface is presented. To control the roughness process, the silicon surface was patterned and groove-shape structures on the silicon were created using a photoelectrochemical (PEC) etching technique. Gallium oxide nanostructures were grown by thermal oxidation from liquid Ga in the presence and the absence of a silver thin film used as a catalyst. Scanning Electron Microscopy (SEM) was used to observe the morphology of the nanostructures grown on the roughed surface of the silicon substrate. The conformal deposition of Ga2O3 nanostructures inside the grooves of the PEC etched silicon surface was observed. The presence of Ag catalyst was found to completely change the morphology of Ga2O3. This method is recommended for the sustainable and low-cost synthesis of nanostructured gallium oxide for applications, including gas sensing.

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“…The surface of the Ga 2 O 3 layer was observed by scanning electron microscopy (SEM) to confirm nanowire formations (FEI Nova NanoSEM430, FEI Company, Hillsboro, OR, USA) and to correlate it with electrical performances. Alhalaili et al [16] have observed, by SEM, energy dispersive X-ray spectroscopy (EDS), and high resolution transmission electron microscopy (HRTEM) equipped with EDS profile analysis, the formation of high-density, long, thin, and ultra-sharp Ga 2 O 3 nanowires obtained in the presence of the Ag catalyst at 1000 • C, which increased electron transfers [12,13]. After oxidation, electrical contacts were patterned at the top of the nanowires using a shadow mask, 5 nm Cr and 50 nm Au were sputtered using a Lesker sputtering system [9].…”

Section: Methodsmentioning

confidence: 99%

“…Alhalaili et al [16] have shown that both the nucleation and growth morphology of Ga 2 O 3 nanostructure film obtained by thermal oxidation depend on several factors, such as the substrate on which Ga 2 O 3 is grown, the use of Ag catalyst, and the oxidation temperature. The morphological and elemental analyses of Ga 2 O 3 nanostructures indicated an increase in the density that the Ga 2 O 3 nanowires obtained in the presence of the Ag catalyst.…”

Section: Introductionmentioning

confidence: 99%

“…Various challenges were identified at the substrate/Ga 2 O 3 interface [16], which require further investigation to better control the growth mechanism and morphology needed to produce uniform films of Ga 2 O 3 nanostructures. When the morphologies of the nanowires grown on bare quartz and Ag-coated quartz were compared, it was found that the Ag catalyst enhanced nanowire growth rates and increased the density of nucleation sites [12].…”

Section: Introductionmentioning

confidence: 99%

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Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications

Alhalaili

Al-Duweesh

Popescu

et al. 2022

Sensors

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Interest in the synthesis and fabrication of gallium oxide (Ga2O3) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their unique properties, i.e., higher surface-to-volume ratio and quantum effects, these nanostructures can significantly enhance the sensitivity of detection. In this work, two Ga2O3 nanostructured films with different nanowire densities and sizes obtained by thermal oxidation of Ga on quartz, in the presence and absence of Ag catalyst, were investigated. The electrical properties influenced by the density of Ga2O3 nanowires (NWs) were analyzed to define the configuration of UV detection. The electrical measurements were performed on two different electric contacts and were located at distances of 1 and 3 mm. Factors affecting the detection performance of Ga2O3 NWs film, such as the distance between metal contacts (1 and 3 mm apart), voltages (5–20 V) and transient photocurrents were discussed in relation to the composition and nanostructure of the Ga2O3 NWs film.

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Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Cited by 6 publications

References 36 publications

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

Novel Approach to Synthesize Nanostructured Gallium Oxide for Devices Operating in Harsh Environmental Conditions

Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications

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