Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications

Abstract

Interest in the synthesis and fabrication of gallium oxide (Ga2O3) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their unique properties, i.e., higher surface-to-volume ratio and quantum effects, these nanostructures can significantly enhance the sensitivity of detection. In this work, two Ga2O3 nanostructured films with different nanowire densities and sizes obtained by thermal oxidation of Ga on quartz, in the presence and absence of Ag catalyst, were investigated. The electrical properties influenced by the density of Ga2O3 nanowires (NWs) were analyzed to define the configuration of UV detection. The electrical measurements were performed on two different electric contacts and were located at distances of 1 and 3 mm. Factors affecting the detection performance of Ga2O3 NWs film, such as the distance between metal contacts (1 and 3 mm apart), voltages (5–20 V) and transient photocurrents were discussed in relation to the composition and nanostructure of the Ga2O3 NWs film.

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

“…Then, the liquid Ga metal reacts with oxygen to form Ga 2 O 3 nanowires in the presence of oxygen at 960 °C. Ga 2 O 3 is preferentially nucleated because Ga has a larger electron affinity than Au . Then, the supernatant of Ti 3 C 2 T x -few was dropped on the Ga 2 O 3 nanowire and annealed to fabricate the Ga 2 O 3 – x Ti 3 C 2 T x heterojunction.…”

“…Ga 2 O 3 is preferentially nucleated because Ga has a larger electron affinity than Au. 26 Then, the supernatant of Ti 3 C 2 T x -few was The microscopy image of the Si/SiO 2 substrate after sputtering with gold dots and cleaning the excess photoresist is displayed in Figure 3a, showing the uniform matrix arrangement of catalyst gold dots on Si/SiO 2 . After calcining Si/SiO 2 on the mixture of raw Ga 2 O 3 and diamond powder via the CVD method, the Ga 2 O 3 nanowires grow on the catalyst gold dots to form a nanowire matrix, and the nanowire matrix dots are connected to form a nanonetwork (Figure 3b,c).…”

One-Step Preparation of Si-Doped Ultra-Long β-Ga2O3 Nanowires by Low-Pressure Chemical Vapor Deposition

“…During annealing, the Au film shrinks into small particles, the amorphous Al 2 O 3 film becomes partially crystallized, and the Si element of the substrate penetrates through the Al 2 O 3 film out-diffusion toward the surface. Si/SiO2 100 VLS [32] 2019 Al2O3 ~100 100-500 VS [16] 2019 Si/SiO2 20-100 VLS [33] 2019 Si Si 30-70 70-160 LPCVD [34] 2020 GaAs 10-100 25-40 Oxidation [35] 2020 Si 50-900 HVPG [1] 2020 Al2O3 Si >6 50-200 MOCVD [30] 2021 Al2O3 >100 80-300 VLS [36] 2022 Quartz 30-100 200-1000 Oxidation [37] 2022 Al2O3 Sn >1000 >1000 CVD [38] 2022 Si 7-25 CVD [31] This work Si/Al2O3 Si >300 30-100 LPCVD…”