Comparative study of leakage power in CNTFET over MOSFET device

Abstract

A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported. The characteristics of both devices are observed as varying the oxide thickness. Thereafter, we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device. After simulation on the HSPICE tool, we observed that the high threshold voltage can be achieved at a low chiral vector pair. It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small. After that, we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices. We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect. It is observed that at below the 10 nm channel length, the threshold voltage is increased rapidly in the case of the CNTFET device, whereas in the case of the MOSFET device, the threshold voltage decreases drastically.

Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates

“…The performance of CMOS and CNFET based inverter and NAND/NOR logic circuits have been analyzed for different gate dielectric materials. Various dielectric materials considered are silicon nitride (Si 3 N 4 ), Aluminum oxide (Al 2 O 3 ), Hafnium oxide (HfO 2 ) and Zirconium oxide (ZrO 2 ) having dielectric constant 7.5, 9, 15.6 and 19 respectively [22]. Table 2 lists the delay, power dissipation and power-delay product for CMOS and CNFET based inverter circuit.…”

“…A. Singh et al analyzed the performance of CNFET for low power applications, high I ON /I OFF ratio, sharp sub-threshold slope, high transconductance in CNFETs show that it is a promising device to be used at nanoscale [21]. S. K. Sinha et al studied the comparison of leakage power in CNFET and MOSFET, it was observed that threshold voltage (V TH ) varies sharply in MOSFET at high temperature (t > 150℃) whereas in CNFET temperature has negligible effect on V TH [22].…”

“…Thickness of gate insulator below 1.5nm in MOSFET causes direct tunneling of current through gate. So high-k dielectrics such as aluminium oxide (k=9), hafnium oxide (k=15.6), and zirconium oxide (k=19) are used [22] with oxide thickness below 1.5nm for better performance.…”

Design of Analog Signal Processing Applications Using Carbon Nanotube Field Effect Transistor-Based Low-Power Folded Cascode Operational Amplifier

“…CNFETs are the transistors in which number of carbon nanotubes (CNTs) acts as a physical channel between source and drain unlike virtual channel in case of metal oxide semiconductor field effect transistor (MOSFET) [8]. CNTs are thin sheets of graphene.…”

Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit

“…In most of the modern design is based on Carbon nanotube because of its superior properties in terms of power consumption, leakage power, delay. The quantum capacitance has a significant force in nanoscale device [6]. The CNTFET-based 8T SRAM cell demonstrates that it provides high stability, low delay and low power, which is better than CNTFET-based 6T SRAM cell as well as CMOS SRAM cell was addressed in [7].…”