Broad area semiconductor lasers (BAL) have poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. The paper presents the study and results of distributed Bragg reflector laser diode with tapered grating (TDBR-LD). By introducing variation in lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve single-lobe output under 0.9A. In contrast to straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD was measured to be 5.23° at 1A, representing a 17% decline. The linewidth of TDBR-LD is 0.4nm at 0.2A, which is reduced by nearly 43% compared with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power of approximate 470mW.