MRD-CI calculations were performed on Ga, Gaz, Ga3, Gag and on the corresponding positive and negative ions. In general, pseudopotentials were used, and 4s 4p/ 2s 2p basis sets with s and p diffuse functions and one or two d functions. For Ga2, all-electron calculations were also performed. For Ga~ -+), potential functions for ground and low-lying excited states are given. For c~,o(_+) geometries were optimized both in C2,, and D~h symmetry. The lowest state of Ga~-is found to be aS +, of Ga3 4A2, and of Ga; 1At(D3h). Ionization potentials and electron affinities of Ga3 were evaluated. Many towlying excited states of Ga~3 -+) were found. Rhombic (Dzh , including square D4h), tetrahedral (Ta), T-shaped (C2~) and linear structures (D~h) were investigated in the search for the lowest state of Ga4. A square-planar arrangement of the nuclei, with Re= 5.30 ao, was found to have the lowest energy. The other geometries lie about 0.5 eV higher. In Dzh symmetry, low-lying excited states of Ga4, as well as ground and excited states of Ga,~ and Gag were studied.Geometries, ionization potentials, electron affinities, atomization and fragmentation energies of Ga, are compared with corresponding data for B, and A1,. Typical changes in going from first-row to third-row atoms are observed.