Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with H2O and O3 for atomic layer deposition of ZrO2

Abstract

Three heteroleptic Zr precursors were studied for atomic layer deposition of ZrO2. Films were deposited from Zr(Cp)(t BuDAD)(O i Pr), Zr(MeCp)(TMEA) and Zr(Me5Cp)(TEA) with either water or ozone as the oxygen source (t BuDAD = N,N-bis(tertbutyl)ethene-1,2

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“…For the growth of ZrO 2 coatings by ALD technology, various precursors of zirconium (Zr) were tested, such as tetrakisdimethylamidozirconium (Zr(NMe 2 ) 4 ), tetrakisethylmethylamidozirconium Zr(NMeEt) 4 , tetrakisdiethylamidozirconium Zr(NEt 2 ) 4. 6 As an oxidant (oxygen precursor), water vapors, 17 ozone 18 or pure oxygen 19 were reported. The proper selection of process condition is crucial, as the crystallographic phase of the zirconium oxide layers depends on the precursors used and the deposition temperature.…”