Comparing pseudopotential predictions for InAs/GaSb superlattices

Dente, Gregory C.; Tilton, Michael L.

doi:10.1103/physrevb.66.165307

Cited by 57 publications

(37 citation statements)

References 15 publications

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“…5. The PL emission peak positions are in good agreement with recent accurate pseudopotential calculations on symmetrical InAs (N)/GaSb(N) type-II SL structure [16] giving a theoretical fundamental transition around 230 meV for a layer thickness N of 10 MLs. We can notice a PL peak shift from 245 meV (no InSb layer) to 215 meV (1.5 ML InSb thickness).…”

Section: Article In Presssupporting

confidence: 83%

“…For that reason, the fundamental electron-hole transition between the lowest-lying conduction C 1 and heavy-hole HH 1 subbands is controlled by the choice of the binary layer thicknesses. Symmetrical InAs (N)/GaSb (N) SL, where the SL's period is composed by equal number N of InAs and GaSb monolayers (MLs), can theoretically exhibit MWIR interband absorption, from 3 to 6 mm, for N values between 5 (15 Å ) and 12 MLs (36 Å ), respectively [16]. However, the major advantage of the type-III band profile is the possibility to reduce the Auger recombination rate by eliminating some nonradiative pathways between valence bands [17].…”

Section: Introductionmentioning

confidence: 99%

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MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Rodriguez

Christol

Cerutti

et al. 2005

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Rodriguez

Christol

Cerutti

et al. 2005

Journal of Crystal Growth

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“…The graph also shows the theoretical wavelength tuning curve calculated by a superlattice pseudopotential model ͑SEPM͒. [2][3][4] When the InAs electron quantum well thickness is set to its minimum value of 1 ML ͑Ϸ3 Å͒, the resulting low wavelength limit is near 2.5 m. Interestingly, if the electron well is completely eliminated ͑i.e., −0 ML InAs͒, the emission wavelength of the resulting epitaxy falls to ϳ2.3 m.…”

Section: Sponsoring / Monitoring Agency Name(s) and Address(es) 10 Smentioning

confidence: 99%

Wavelength tuning limitations in optically pumped type-II antimonide lasers

Ongstad

Kaspi

Dente

et al. 2008

Applied Physics Letters

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In this paper, we examine the wavelength tuning limitations of type-II antimonide lasers containing InAs∕InGaSb∕InAs quantum wells. Wavelength tuning is accomplished by varying the thickness of the InAs electron wells while keeping all else fixed. In principle, these wells can be tuned from λ≈2.5μm out to far IR wavelengths by increasing the thickness of the InAs layers. However, a practical upper limit of λ≈9.5μm is set due to the high waveguide losses awg and the diminishing modal overlap with the gain at longer wavelengths. The waveguide losses grow as awg∝λ3.44 and are attributable to free carrier absorbance. In order for the long-IR laser devices to achieve threshold, they must continually band fill, spectrally tuning to shorter wavelengths, until the laser gain exceeds the losses, which occurs near 9.5μm.

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“…21 An arguably more realistic potential ͑although not all would agree 20 ͒ is provided by the atomic superposition model, which is defined as a linear combination of screened atomic pseudopotentials. [22][23][24][25][26][27][28] Here, the atomic potentials are assumed to be known as continuous functions of k; 29 hence, no interpolation is required.…”

Section: Previous Descriptions Of the Interface Potentialmentioning

confidence: 99%

“…The simplest is the planar interface model, in which the potential is assumed to make an abrupt transition from one periodic bulk potential to another at some predefined interface plane. [13][14][15][16][17][18][19][20] This requires as input only the bulk pseudopotential form factors.…”

Section: Previous Descriptions Of the Interface Potentialmentioning

confidence: 99%

Accurate quadratic-response approximation for the self-consistent pseudopotential of semiconductor nanostructures

Foreman

2007

Phys. Rev. B

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Quadratic-response theory is shown to provide a conceptually simple but accurate approximation for the self-consistent one-electron potential of semiconductor nanostructures. Numerical examples are presented for GaAs/ AlAs and In 0.53 Ga 0.47 As/ InP ͑001͒ superlattices using the local-density approximation to densityfunctional theory and norm-conserving pseudopotentials without spin-orbit coupling. When the reference crystal is chosen to be the virtual-crystal average of the two bulk constituents, the absolute error in the quadraticresponse potential for ⌫ 15 valence electrons is about 2 meV for GaAs/ AlAs and 5 meV for In 0.53 Ga 0.47 As/ InP. Low-order multipole expansions of the electron density and potential responses are shown to be accurate throughout a small neighborhood of each reciprocal-lattice vector, thus providing a further simplification that is confirmed to be valid for slowly varying envelope functions. Although the linear response is about an order of magnitude larger than the quadratic response, the quadratic terms are important both quantitatively ͑if an accuracy of better than a few tens of meV is desired͒ and qualitatively ͑due to their different symmetry and long-range dipole effects͒.

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Comparing pseudopotential predictions for InAs/GaSb superlattices

Cited by 57 publications

References 15 publications

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Wavelength tuning limitations in optically pumped type-II antimonide lasers

Accurate quadratic-response approximation for the self-consistent pseudopotential of semiconductor nanostructures

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