2004
DOI: 10.1109/jlt.2004.831182
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Comparison Among Various<tex>$hbox Si_3hboxN _4$</tex>Waveguide Geometries Grown Within a CMOS Fabrication Pilot Line

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Cited by 114 publications
(72 citation statements)
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References 15 publications
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“…For a discussion and validation of the method see Ref. 23. Figure 12 shows a top view of the scattered light from an 8-m-wide rib and 0.95-cm-long waveguide.…”
Section: Loss Measurements and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…For a discussion and validation of the method see Ref. 23. Figure 12 shows a top view of the scattered light from an 8-m-wide rib and 0.95-cm-long waveguide.…”
Section: Loss Measurements and Discussionmentioning
confidence: 99%
“…An experimental estimate of about 15 dB has been obtained by comparison with similar samples for which it was possible to determine the propagation losses by the cut-back technique and, hence, to deduce the coupling losses. 23 Propagation losses coefficients have been obtained by subtracting coupling from insertion losses and are reported in Table II for light at 633 and 780 nm. It is worth noting that the two independent techniques give the same ͑within the error bar͒ loss coefficients, thus demonstrating the reliability of both experimental procedures.…”
Section: -6mentioning
confidence: 99%
“…The waveguide considered for the 2-D en/decoder is assumed to be composed of Hydex, a low-loss high-indexcontrast glass-based material system [15]. The waveguide-core refractive index is 1.70, while that of the cladding is 1.45, giving a refractive index-contrast ratio of 17% with respect to the cladding.…”
Section: Simulation Results For 2-d En/decodermentioning
confidence: 99%
“…For comparison, the nonlinearity of silicon nitride is roughly 10 times the nonlinearity of silica, 2 times that of Hydex, and 0.1 times that of silicon. On the loss side, 200 nm thick channel waveguides with ≤ 0.2 dB/cm propagation loss at 780 nm have been demonstrated, 16 and at 1540 nm propagation losses of 0.12 dB/cm have been measured in channel waveguides of more than 700 nm thickness. 17 The specific device design studied in this work is a buried channel Si 3 N 4 waveguide circuit consisting of a racetrack resonator (RTR) with radius of curvature R, laterally coupled to a straight bus waveguide, as illustrated in Fig.…”
Section: Device Design and Fabricationmentioning
confidence: 99%