Comparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection

Abstract

Articles you may be interested inComparative hydrogen sensing performances of Pd-and Pt-InGaP metal-oxide-semiconductor Schottky diodes J.

Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

“…This means that it is favorable to quickly operate at higher temperature regimes. For instance, the calculated response time in 9970 ppm H 2 /air reduces from 42 to 3 s with increasing the operating temperature from 323 to 403 K. As compared with the Pd/GaAs (E a = 40.9 kJ mol −1 ) and Pt/GaAs (E a = 43.9 kJ mol −1 ) Schottky diodes [25], the studied device exhibits the smaller E a value. This reveals that the studied Pd-GaAs HEMT can also perform rapid detection at low temperature.…”

Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based Schottky diodes

“…A Si-based FET hydrogen sensor, produced by a MOS structure with a catalytic metal, was first reported by Lundström et al [7]. Recently, different semiconductor materials, such as InP [8,9], GaAs [10,11], GaP [12], InGaP [13], AlGaAs [14], SiC [15,16], GaN [17,18], and AlGaN [19,20], have also been applied to hydrogen sensing. In the case of semiconductortype hydrogen sensors, the reaction on the catalytic metal surface or adsorption at the metal-oxide (or metal-semiconductor) interface induces concentration-dependent changes of the electrical properties.…”

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

“…Thus, for example, if the starting position on the R D -T curve is just to the low-temperature side of the NDR region, then any lowering of barrier height will cause a collapse in R D as the NDR region shifts to a lower temperature regime. Schottky diodes based on III-V semiconductors, with a Pd electrode, are known to exhibit sensitivity to hydrogen [25][26][27][28]31]. On interaction with Pd, hydrogen dissociates and becomes chemisorbed in the Pd, forming α-or β-phase Pd hydride [52,53].…”

“…In particular, the role of molecules at the metal/semiconductor interface in modifying the SBH [20] has been a focus of research attention and is the basis for gas sensing by Schottky diodes [21][22][23][24]. As a lead-in to an important aspect of the investigation reported here we specifically highlight the area of hydrogen detection by III-V based Schottky diodes [24][25][26][27][28][29][30][31][32].…”