Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors

Buhler, R. T.; Eneman, G.; Favia, P.; Bender, Hugo; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Martino, João Antônio; Claeys, Cor; Simoen, Eddy; Collaert, N.; Thean, Aaron

doi:10.1002/pssc.201400021

Cited by 5 publications

References 9 publications

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Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Ike

Nakatsuka

Moriyama

et al. 2015

Applied Physics Letters

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We have investigated the formation of the locally strained Ge nanostructure with epitaxial Ge1−xSnx stressors and characterized the microscopic strain field in the Ge1−xSnx/Ge fine-heterostructures by synchrotron X-ray microdiffraction and finite element method (FEM) calculations. We achieved local epitaxial growth of Ge1−xSnx with Sn contents of 2.9% and 6.5%, sandwiching the 25 nm-wide Ge fine line structure. Microdiffraction measurements revealed that out-of-plane tensile strain induced in the Ge line effectively increased with decreasing Ge width and increasing Sn content of Ge1−xSnx stressors, which is in good agreement with FEM calculations. An out-of-plane tensile strain of 0.8% along the Ge[001] direction is induced in a 25 nm-wide Ge line, which corresponds to an in-plane uniaxial compressive strain of 1.4% in the Ge line sandwiched between Ge0.935Sn0.065 stressors.

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Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Ike

Nakatsuka

Moriyama

et al. 2015

Applied Physics Letters

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Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

et al. 2018

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The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process line-compatible. Raman spectroscopy meets these requirements but the diffraction limit prevents its application in current and future technology nodes. We show that nano-focused Raman scattering overcomes these limitations and can be combined with oil-immersion to obtain quantitative anisotropic stress measurements. We demonstrate accurate stress characterization in strained Ge fin field-effect transistor channels without sample preparation or advanced microscopy. The detailed analysis of the enhanced Raman response from a periodic array of 20 nm-wide Ge fins provides direct access to the stress levels inside the nanoscale channel, and the results are validated using nano-beam diffraction measurements.

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TCAD Simulation of Single Event Effects on Electronic Devices

Buhler

Novo

Perin

et al. 2022

J. Phys.: Conf. Ser.

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In this paper, lateral bulk PIN photodiodes designed at FEI University and SOI (Silicon-on-Insulator) PIN photodiodes from UCL are analyzed as photodetectors and SEE (Single Event Effects) sensors. Numerical simulations are used for radiation analysis of heavy ion striking the PIN photodiode using the parameters extracted by real measurements in a non-radiation condition. The occurrence of SEE near-Earth natural environment is unpredictable and is a serious threat that can lead to malfunctions of microprocessors, memory banks and devices that are vital to the correct behavior of a low-orbit or avionic mission. Detecting their occurrence and monitoring the energetic particles in radiation environments is vital and this paper investigates the consequence of SEE on lateral PIN photodiodes through experimentally calibrated TCAD numerical simulations.

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Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors

Cited by 5 publications

References 9 publications

Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

TCAD Simulation of Single Event Effects on Electronic Devices

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