Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications

Yota, Jiro; Janani, Maryam; Camilletti, Lawrence; Kar‐Roy, A.; Liu, Q.Z.; Nguyen, Cong Thanh; Woo, M.; Hander, J.; Cleemput, P. van; Chang, W.Y.; Chiou, W.C.; Li, L.J.; Chao, Liang; Jang, Sun‐Joo; Yu, C. H.; Meng, Lei

doi:10.1109/iitc.2000.854287

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…2. Table II also lists the composition of another PECVD silicon nitride film as well as an HDP silicon nitride studied by Yota et al 5 All the films in Table II were deposited at 400°C. Damascene Nitride has a nitrogen-to-silicon ratio of 1.26, and the hydrogen content ͑based on HFS͒ in the film is 13 atom%, ϳ6 atom% less than other PECVD silicon nitride films.…”

Section: Discussionmentioning

confidence: 99%

Development and Characterization of a PECVD Silicon Nitride for Damascene Applications

Lee

Rajagopalan

et al. 2004

J. Electrochem. Soc.

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A silicon nitride film, Damascene Nitride™, is deposited in a plasma-enhanced chemical vapor deposition ͑PECVD͒ chamber with a conical hole faceplate using silane and ammonia as precursors. Fourier transform infrared analysis indicates that Damascene Nitride is similar to a high-density plasma nitride film. Hydrogen forward scattering spectroscopic analysis shows the film's hydrogen content to be 13%, ϳ6% less than other PECVD nitride films, leading to a 20% improvement in etch selectivity to fluorinated silicate glass. Secondary ion mass spectrometric analysis shows that Cu diffusion is Ͻ250 Å in the nitride; a low leakage current (10 Ϫ12 A) is confirmed through bias temperature stress testing. The higher density of Damascene Nitride leads to higher etch selectivity and better Cu barrier properties, allowing a thinner nitride film to be used. Thinner nitride layers, in addition to the lower dielectric constant ͑͒ of Damascene Nitride, leads to a 5-6% reduction in resistance-capacitance delay when Damascene Nitride is used with low-dielectric materials.

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Section: Discussionmentioning

confidence: 99%

Development and Characterization of a PECVD Silicon Nitride for Damascene Applications

Lee

Rajagopalan

et al. 2004

J. Electrochem. Soc.

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“…The density of the film deduced from the slope is 2.2 g/cm 3 , which is comparable to those of films deposited by conventional plasma-enhanced or high-density plasma CVD. 33) The amounts of mass increase due to SiN deposition on the SiOCH films and Si substrate are shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition Sealing Property on Extreme Low-k Film with k = 2.0 Quantified by Mass Metrology

Ishikawa¹,

Kobayashi²,

Nakano³

et al. 2013

Jpn. J. Appl. Phys.

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We have investigated plasma-enhanced atomic layer deposition (PEALD) SiN pore-sealing film formation and diffusion behavior on highly porous SiOCH films. Mass measurement revealed the diffusion of the precursor used in PEALD into pores of SiOCH films, which was enhanced for higher-porosity SiOCH films. The diffusion of the precursor into the pores was reduced by applying UV-assisted restoration treatment before the pore-sealing process, which helped the formation of hermetic pore-sealing films. The results indicated that a 1-nm-thick SiN film was sufficient to seal the surface of the restored SiOCH film with k = 2.0. It was found that the decrease in k due to the pore-sealing deposition was as small as 0.02. The results indicated that the sequential application of UV-assisted restoration and PEALD-SiN pore sealing is a promising method of introducing the use of highly porous SiOCH films with k = 2.0 into interconnect integration.

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“…Dielectrics have been widely used for various applications in semiconductor fabrication, in the processing of both silicon and compound semiconductors, such as GaAs. They include applications, such as surface passivation, pre-metal dielectric, capacitor dielectric, interlevel dielectric, anti-reflective coating, final passivation, redistribution layer, and as stress buffer layer and encapsulant in packaging (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12). There are several types of dielectrics that are typically used for interlevel dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Yota

2009

ECS Trans.

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In this study, we have evaluated several interlevel dielectric materials for GaAs hetero-junction bipolar transistor (HBT) technology. This technology requires the material to have good gapfill and planarizing characteristics, as the various device and interconnect structures can have significant topography. Additionally, the process typically can only have a maximum temperature of <300oC, as device degradation can occur at higher temperatures. The dielectric materials evaluated are PECVD silicon nitride (Si3N4), polyimide, and photodefinable polybenzoxazole (PBO). The PECVD Si3N4 is mostly conformal when deposited. However, it has a high dielectric constant, cannot be used as gapfill material, and does not planarize the underlying topography, which makes multilevel metallization challenging. Polyimide and PBO, both of which need to be thermally cured, have lower dielectric constant than PECVD Si3N4. However, the polyimide has to be dry-etched, unlike the photosensitive PBO. Furthermore, the PBO has better gapfill and planarization capabilities than polyimide.

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Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications

Cited by 8 publications

References 6 publications

Development and Characterization of a PECVD Silicon Nitride for Damascene Applications

Development and Characterization of a PECVD Silicon Nitride for Damascene Applications

Plasma-Enhanced Atomic Layer Deposition Sealing Property on Extreme Low-k Film with k = 2.0 Quantified by Mass Metrology

Comparison of Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

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