Abstract:This paper presents a comparison between nMOS and pMOS Ω-Gate Nanowire for different channel width (W NW ) down to 10 nm as a function of the large back gate bias variation (from +20 to −20 V) experimentally and by simulation. The main digital and analog parameters are analyzed in these devices as threshold voltage, subthreshold swing (SS), transconductance, transistor efficiency, Early Voltage and intrinsic voltage gain for transistor channel width from 220 nm down to 10 nm. It is shown that narrow channel de… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.