Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Koga, Kazunori; Matsunaga, Takeaki; Nakamura, William Makoto; Nakahara, Kenta; Kawashima, Yuuki; Kamataki, Kunihiro; Itagaki, Naho; Shiratani, Masaharu

doi:10.1016/j.tsf.2011.01.408

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…[5][6][7] However, it has been recognised that amorphous silicon thin films suffer light induced degradation, resulting in a reduction in the power conversion efficiency of the device. 8,9 The light induced degradation is attributed to an intrinsic phenomenon typical of the disorder network consisting of Si and H, which forms metastable Si dangling bond defects and acts as recombination centres for electron-hole pairs and consequently decreases the photocarrier lifetime.…”

Section: Introductionmentioning

confidence: 99%

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Lü

Yang

2015

Surface Engineering

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Hydrogenated silicon thin films were deposited using plasma enhanced chemical vapour deposition method. The effects of substrate temperature on the microstructure and electrical properties of the films were investigated. Results show that the as received crystalline silicon thin film is a typical two-phase structure consisting of an amorphous phase and a crystalline phase. At a lower substrate temperature, the thickness of the initial amorphous incubation layer is dozens of nanometers, and few crystalline grains inset in the film after phase transition. As the substrate temperature increases, the initial incubation stage shortens to several nanometers, and the phase transition to crystalline starts earlier. After the phase transition, abundant crystallites appear, and the amorphous phase exists in the film just as the grain boundary. However, at overhigh substrate temperature, the average crystallinity and grain size of the film decrease. Deposition rate abidingly decreases with the increase in substrate temperature. The films with more ordered structure exhibit superior electrical properties.

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Section: Introductionmentioning

confidence: 99%

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Lü

Yang

2015

Surface Engineering

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“…[18][19][20][21] Recently, we have developed a cluster-suppressed plasma chemical vapor deposition (CVD) method by which Si clusters can be significantly suppressed in the upstream region owing to a gas flow velocity high enough to drive Si clusters toward the downstream region. [22][23][24][25][26] Using this method, we successfully deposited cluster-free a-Si:H films with a stabilized defect density of 4:7 Â 10 15 cm 3 at a high deposition rate of 3.0 nm/s. 22) There have been many studies on gas phase analysis using mass spectrometry or optical emission spectroscopy in order to identify radicals that trigger the generation of Si clusters in silane discharge plasmas, [27][28][29][30] but there has been no work on the relationship between deposition conditions and the volume fraction of Si clusters in deposited films.…”

Section: Introductionmentioning

confidence: 99%

Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si^and SiH^

Kim¹,

Hatozaki²,

Hashimoto³

et al. 2013

Jpn. J. Appl. Phys.

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The volume fraction of silicon clusters in amorphous silicon (a-Si:H) films has been investigated using specially designed quartz crystal microbalances (QCMs) together with optical emission spectroscopy (OES). The optical emission intensities of Si* and SiH* and their intensity ratios are selected for comparison with the QCM results. We show that the volume fraction of silicon clusters strongly correlates with not only the electron temperature but also the SiH* intensity. This suggests that the ratios of Si*/SiH* and SiH* can be used to predict the volume fraction of Si clusters in a-Si:H films.

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“…Metallic particles ranging from 100 nm to few microns are typically used in the manufacturing of most conventional electronic devices [6,17,18] and crystalline silicon solar cells [9,[19][20][21]. Primary applications for MPs of this size range, have been in sintered metallic structures (conducting tracks) of 10-100 µm.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of dispersed metal particles for applications in photovoltaics, catalysis, and electronics

Sevonkaev

Privman

Goia

2012

J Solid State Electrochem

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In colloid and nanoparticle chemistry, particle size, shape, crystallinity, surface morphology and composition are controlled by employing the mechanisms of burst nucleation, diffusional growth, aggregation, or their combinations. Here we review and survey practical examples of recently developed methods for preparing metal colloids and nanoparticles for industrial applications such as photovoltaics, catalysis, and consumer electronics. We discuss relevant theoretical models, many of which are general, and identify growth mechanisms that play a major role in other systems and applications as well.

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Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Cited by 5 publications

References 19 publications

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si^and SiH^

Synthesis of dispersed metal particles for applications in photovoltaics, catalysis, and electronics

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Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Cited by 5 publications

References 19 publications

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si*and SiH*

Synthesis of dispersed metal particles for applications in photovoltaics, catalysis, and electronics

Contact Info

Product

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Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si^and SiH^