Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells

Li, Qingxuan; Li, Bo; Wang, Lei; Zheng, Zhongming; Zhang, Baoping; Liu, Ningyang; Li, Binhong; Liu, Mengxin; Huang, Yang; Gong, Zheng; Chen, Zhitao; Liu, Xinyu; Luo, Jun; Han, Zhengsheng

doi:10.1016/j.jlumin.2019.02.034

Cited by 8 publications

(2 citation statements)

References 22 publications

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“…For sample #0, the blue emission at 447 nm can be deconvolved into two peaks, 447.29 and 461.04 nm. The former with an energy of 2.77 eV is from InGaN/GaN MQWs, and the latter with an energy of 2.690 eV is the LO replicas with a difference of 82.67 meV [38]. Sample #P1 and #P2 have two peaks with the same difference of 85.26 meV, the peak at 462.00 nm is the LO replicas of peak at 447.73 nm, the same as shown in figures 5(d)-(f) and table 2.…”

Section: Pl Spectrum Analysismentioning

confidence: 99%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

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The paper reports on the degradation of InGaN/GaN Blue LED submitted to proton irradiation at 80 MeV and various fluences (4×1013 p/cm2 and 1×1014 p/cm2). After irradiation, we found a decrease in light output power and the external quantum efficiency with fluence. Photoluminescence (PL) measurements exhibited that the peak position at 400, 447 and 568 nm remained unchanged, only the peak intensity decreased. The intensity of the blue emission reduced by 75%, indicating that the active region degraded seriously; the intensity from InxGa1-xN (x=0.11) reduced more than two times in comparison with the blue emission, implying that proton irradiation affected InxGa1-xN more seriously than InGaN/GaN MQWs. The degradation of LED is ascribed to the increase in the defect-related Shockley–Read–Hall recombination after 80 MeV proton irradiation with higher fluence.

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Section: Pl Spectrum Analysismentioning

confidence: 99%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

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show abstract

“…The temperature-dependent PL spectrum was measured with the temperature increasing from 10 K to 300 K. The carriertrapping ability of the defect decreases at low temperature and the radiation recombination is the dominate mechanism [42]. With the increase in temperature, the defect activity increases, and the non-radiation recombination process starts to dominate.…”

Section: Plmentioning

confidence: 99%

Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

Yu,

Hu,

et al. 2023

Semicond. Sci. Technol.

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GaN-based semiconductors have a strong potential for applications in space systems because of their high radiation resistance. Here, we investigate the influence of 1.5 MeV electron irradiation on the structural, electrical, and optical properties of InGaN/GaN multiple quantum wells (MQWs). The results show that at lower electron fluencies, the indium content in theInGaN/GaN MQWs decreases by about 0.4% because of the ionization of valence electrons induced by electron irradiation, but at higher electron fluencies, the indium concentration increases by about 1.5% because of the appearance of indium-rich "clusters" in the homogeneous quantum wells. Moreover, the fitted activation energy of the irradiated quantum wells increase by about 16% than that of the as-grown MQWs.

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Effects of electron irradiation on analog and linearity performance of InP-based HEMT

Sun,

Zhong,

Yao

et al. 2023

Appl. Phys. A

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Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells

Cited by 8 publications

References 22 publications

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

Effects of electron irradiation on analog and linearity performance of InP-based HEMT

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Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells

Cited by 8 publications

References 22 publications

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

Effects of electron irradiation on analog and linearity performance of InP-based HEMT

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Product

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Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells