Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS

Issakov, Vadim; Siprak, D.; Tiebout, M.; Thiede, A.; Simbürger, W.; Maurer, Linus

doi:10.1049/iet-cds.2009.0134

Cited by 19 publications

(10 citation statements)

References 4 publications

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“…Implementation of such systems using silicon-based processes can reduce the cost by an order of magnitude, enabling ubiquitous and pervasive adoption of radar technology. In last years, different silicon implementations [1][2][3][4][5][6][7][8] have proved the maturity of both highspeed bipolar and sub-lm CMOS processes for multi-GHz applications, such as 24-GHz automotive short-range radar (SRR).…”

Section: Introductionmentioning

confidence: 99%

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

Ragonese

Scuderi

Giammello

et al. 2010

Analog Integr Circ Sig Process

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This paper presents a fully integrated SiGe BiCMOS 24-GHz receiver front-end implemented for a ultra-wideband automotive short-range radar sensor. The circuit consists of a homodyne I/Q down-converter and a 24-GHz synthesizer. The receiver front-end is able to achieve a power conversion gain as high as 30 dB and a 6-dB noise figure, while preserving high linearity performance thanks to a 1-bit gain control. The frequency synthesizer, which also includes an on-chip loop filter, guarantees a phase noise of -104 dBc/Hz at 1-MHz offset from the 24.125-GHz carrier and a 4.7-GHz tuning range from 20.4 to 25.1 GHz.

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Section: Introductionmentioning

confidence: 99%

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

Ragonese

Scuderi

Giammello

et al. 2010

Analog Integr Circ Sig Process

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show abstract

“…In this project, the 24-GHz radar transceiver was targeted for a maximum distance of 50 m. The targeted NF of the LNA and the PA output power were selected based on state-of-the-art papers [10], [12]. In these references, the minimum NF, achieved thus far with CMOS technology, lies between 6-7 dB.…”

Section: System Design and Transceiver Architecturementioning

confidence: 99%

“…Other state-ofthe-art K band receivers [10], [11] also perform well with respect to gain, but have a low level of integration and relatively high power consumption. Another example of a passive mixer architecture is shown in [12], but with a relatively high NF and a lower gain performance.…”

Section: Introductionmentioning

confidence: 99%

Cooperative Indoor Localization Using 24-GHz CMOS Radar Transceivers

Ebelt

Hamidian

Shmakov

et al. 2014

IEEE Trans. Microwave Theory Techn.

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This paper presents the first truly wireless 24-GHz round-trip time-of-flight local positioning frontend with an integrated CMOS transceiver. The transceiver in 130-nm CMOS technology features a novel receiver/transceiver switching concept, which reduces RF losses between the receiver/transmitter and antenna and drastically improves the transmit/receive isolation. The low-power RF transceiver chip was integrated with a digital signal-processing unit and mounted on a circuit board to form a system-level demonstrator of a secondary radar node incorporating synchronization and a distributed localization algorithm. The performance of the self-organizing localization network is evaluated in an indoor setup using comparisons with reference trajectories. Experimental results show a distance precision between the active nodes close to the theoretical optimum that can be achieved with the used signal parameters, as well as an absolute localization error in the centimeter range.

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“…Many papers have published K-band front-ends using Si CMOS technology [4][5][6][7][8]. Initially, a 24 GHz RF front-end was proposed in 2004 [4].…”

Section: Introductionmentioning

confidence: 99%

“…The UWB front-end consisted of an LNA, a mixer, a variable gain amplifier, a pulse former, and a voltage controlled oscillator. In 2008 and 2009, researchers introduced 24 GHz receiver front-ends [7,8]. The proposal [7] included a 24 GHz CMOS passive subharmonic mixer/downconverter for zero-IF applications.…”

Section: Introductionmentioning

confidence: 99%

Wideband on-Chip K-Band Rf Front-End for Vehicular FMCW Radar Applications in 0.18 Î¼m Cmos Process

Yu¹,

Choi²,

Kim

2010

PIER C

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In this paper, we present a wideband on-chip K-band RF front-end including a transmitter and receiver for vehicular FMCW radar applications using 0.18 µm CMOS process. To achieve wideband performance, an RC feedback circuit is applied to the input stage of amplifiers, as well as wideband passive circuits such as Marchand type baluns and Wilkinson type power dividers to the mixer LO port and transmitter output, respectively. The designed chip shows a 3-dB bandwidth of 6 GHz and 4.8 GHz for the receiver and transmitter, respectively. The receiver represents a gain of 18 dB and an inputreferred 1 dB compression point of −9 dBm at an RF frequency of 24.15 GHz and an IF frequency of 100 kHz. The transmitter shows a power gain of 8.9 dB and an output power of 6.8 dBm at a frequency of 24.15 GHz. The total chip has a size of 1500 µm × 1270 µm while consuming 71 mA with a supply voltage of 1.8 V. Further, the designed RF front-end chip has been verified by radar performance tests such as the Doppler shift and range information. The test result for range information shows good agreement with theoretical expectations.

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Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS

Cited by 19 publications

References 4 publications

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

Cooperative Indoor Localization Using 24-GHz CMOS Radar Transceivers

Wideband on-Chip K-Band Rf Front-End for Vehicular FMCW Radar Applications in 0.18 Î¼m Cmos Process

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