Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances

Codreanu, C.; Avram, Mărioara; Carbunescu, Eugenia G.; Iliescu, E.

doi:10.1016/s1369-8001(00)00022-6

Cited by 65 publications

(24 citation statements)

References 24 publications

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“…According to [56], the nonlinear dependence of the electron drift velocity on electric field for SiC polytypes is expressed in (17). Utilizing the parameters for mobility from Table VI, the value of ,0 = 2.5 × 10 7 cm/s [57] and equation (17), the parameter , from (16) can be fitted to the data presented in [58]. The parameters for the high field mobility dependence are summarized in Table VIII.…”

Section: High -Field Mobilitymentioning

confidence: 99%

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Arvanitopoulos¹,

Lophitis²,

Gyftakis³

et al. 2017

Semicond. Sci. Technol.

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The cubic form of SiC (βor 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-and 6H-SiC, has lower growth cost and can be grown heteroepitaxially in large area Silicon (Si) wafers which makes it of special interest. This in conjunction with the recently reported growth of improved quality 3C-SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C-SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C-SiC. Considerably, it constitutes the necessary step for Finite Element Method (FEM) simulations and Technology Computer Aided Design (TCAD).

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Section: High -Field Mobilitymentioning

confidence: 99%

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Arvanitopoulos¹,

Lophitis²,

Gyftakis³

et al. 2017

Semicond. Sci. Technol.

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“…The deposition and stacking of the Si-C dimer induced SiC growth in the [0001] or [000−1] directions. (2) In this work, we focused on the simulation of 4H and 6H polytype competitive growth, whereas other defects like micropipes and stacking faults were not included in the model. Hence, the stacking order of Si-C bilayers was the ABAC sequence in the 4H-SiC unit cell, and the ABCACB sequence in the 6H-SiC unit cell.…”

Section: Experimental and Simulation Modelmentioning

confidence: 99%

“…1,2 SiC is known to exist in more than 200 polytypes, of which 4H-SiC is widely used in SiC devices because of its advantages over the other polytypes. 3,4 The physical vapor transport (PVT) method is the most successful and common method for the growth of bulk SiC crystals.…”

Section: Introductionmentioning

confidence: 99%

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

et al. 2014

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Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step nucleation, are important. The kinetic Monte Carlo method is a common tool to study surface kinetics in crystal growth. However, the present lattice models for kinetic Monte Carlo simulations cannot solve the problem of the competitive growth of two or more lattice structures. In this study, a competitive lattice model was developed for kinetic Monte Carlo simulation of the competition growth of the 4H and 6H polytypes of SiC. The site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. Surface steps on seeds and large ratios of diffusion/deposition have positive effects on the 4H polytype stability. The 3D polytype distribution in a physical vapor transport method grown SiC ingot showed that the facet preserved the 4H polytype even if the 6H polytype dominated the growth surface. The theoretical and experimental results of polytype growth in SiC suggest that retaining the step growth mode is an important factor to maintain a stable single 4H polytype during SiC growth.

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“…As compared with 6H-SiC, 4H-SiC has superior electron mobility, which is critical to high electron mobility transistors. 9 Conventionally, AlN is grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) at high temperatures over 900 C to achieve highly crystalline epitaxial layers. 10,11 However, these hightemperature growth techniques are challenged by the generation of mist dislocations at AlN/SiC hetero-interface, which leads to high threading dislocation densities up to 10 8 cm 2 for AlN grown on SiC.…”

Section: Introductionmentioning

confidence: 99%

AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

Kao

Lee

et al. 2019

RSC Adv.

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Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances

Cited by 65 publications

References 24 publications

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

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