Comparison of advanced transport models for nanoscale nMOSFETs

Palestri, Pierpaolo; Alexander, Craig; Asenov, A.; Baccarani, G.; Bournel, A.; Braccioli, M.; Cheng, Binjie; Dollfus, Philippe; Esposito, Aniello; Esseni, D.; Ghetti, A.; Fiegna, Claudio; Fiori, Gianluca; Aubry-Fortuna, V.; Iannaccone, Giuseppe; Martı́nez, Antonio; Majkusiak, B.; Monfray, S.; Reggiani, Susanna; Riddet, Craig; Saint-Martin, Jérôme; Sangiorgi, E.; Schenk, Andreas; Selmi, L.; Silvestri, Luca; Walczak, J.

doi:10.1109/ulis.2009.4897554

Cited by 3 publications

(4 citation statements)

References 14 publications

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“…The results of the compact model have been compared with the numerical simulation data obtained by several research groups using advanced transport models [7][8][9][10][11][12][13][14][15][16]. Figure 2 shows the transfer characteristics of the 22 nm DG MOSFETs at low and high V DS .…”

Section: Resultsmentioning

confidence: 99%

“…In the DD family, the model gathers DD-like models where only the first momentum of the BTE is calculated. The MC family collects models based on the direct solution of the BTE using the MC method [7]. The MC model incorporates all relevant scattering mechanisms such as ionized impurities (II), surface roughness (SR), phonon scattering, etc.…”

Section: Simulated Devices and Approachesmentioning

confidence: 99%

“…Using the charge control models in (1) and the velocity expression in (7), the expression of the drain current in a DG MOSFET is calculated as a function of the mobile-charge densities at the source Q s and at the drain Q d [2]:…”

Section: Drain Currentmentioning

confidence: 99%

“…The modified mobility expression given in (7) allows the carrier velocity to exceed the saturation velocity if the channel length becomes comparable with the energy-relaxation length. Thus, the energy relaxation length λ w inherits the velocity overshoot within its expression.…”

Section: Velocity Overshootmentioning

confidence: 99%

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Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

Cheralathan

Sampedro

Roldán

et al. 2011

Semicond. Sci. Technol.

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In this paper, we present a double-gate (DG) MOSFET compact model including hydrodynamic transport and quantum mechanical effects in order to extend its application to nanometer technology nodes. The final compact model can accurately reproduce simulation results of some of the most advanced transport simulators. Template devices representative of 22 and 16 nm DG MOSFETs are used. The model is based on a compact model for charge quantization within the channel and it includes mobility degradation, channel length modulation, drain-induced barrier lowering, overshoot velocity effects and quantum mechanical effects. Comparison between the advanced transport modeling approaches and the compact model shows a good degree of agreement within the practical range of voltages.

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