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In this paper, we present a double-gate (DG) MOSFET compact model including hydrodynamic transport and quantum mechanical effects in order to extend its application to nanometer technology nodes. The final compact model can accurately reproduce simulation results of some of the most advanced transport simulators. Template devices representative of 22 and 16 nm DG MOSFETs are used. The model is based on a compact model for charge quantization within the channel and it includes mobility degradation, channel length modulation, drain-induced barrier lowering, overshoot velocity effects and quantum mechanical effects. Comparison between the advanced transport modeling approaches and the compact model shows a good degree of agreement within the practical range of voltages.

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degradation, drain-induced barrier lowering, velocity overshoot, and quantum effects. Comparison between the compact model and the advanced transport modeling approaches shows good agreement within the practical range of drain voltages.

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