Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Chang, Sung‐Jae; Cheralathan, Muthupandian; Bawedin, M.; Iñı́guez, Benjamı́n; Bayraktaroglu, B.; Lee, Jong‐Hyun; Lee, Jung‐Hee; Cristoloveanu, S.

doi:10.1016/j.sse.2013.02.040

Cited by 9 publications

(10 citation statements)

References 35 publications

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“…The smooth surface of the nanocrystalline GdZnO film indicates that Gd doping in both GdZnO and GdZnO/GI interface could reduce the grain boundary defects. [43][44][45][46] Note that the surface roughness of ZnO film increases from 1.21 to 1.49 nm by Li doping because of the grain size increases as shown in Figure 2d,e. The R RMS decreases from 1.21 to 1.02 nm by 10% Gd doping shown in Figure 2f.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…The lower activation energy reveals the lower trap states in the bulk and interface, and shift the Fermi level toward the conduction band. [43,53] The hysteresis of the transfer curve at 60 °C is shown in Figure 6c for ZnO, 10% Gd doped ZnO, and Li codoped GdZnO TFTs. The transfer curve was achieved by sweeping the gate voltage from −5 to + 5 V at a drain voltage (V DS ) of 0.1 V with V GS of +5 V for 1 h. The summery of V TH shift by PBTS for 1 h for ZnO and doped ZnO TFTs is shown in Figure S13 (Supporting Information).…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…The fewer traps are partially due to higher bonding dissociation energy of GdO, which induces more MOM network and less V o . [43] We designed a model for the grains and grain boundaries for pristine ZnO, 5% Li doped ZnO, 10% Gd doped ZnO, and Li codoped GdZnO films as shown in Figure 6d-g. There are many defects at the grain boundaries for ZnO due to the mismatch of the grains.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

See 2 more Smart Citations

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

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ZnO is a well-known oxide semiconductor because of its excellent electrical and optical properties due to its crystalline structure with high carrier mobility and tunable bandgap by alloying. [13,14] Although, ZnO TFT has high carrier density with crystalline structure, it has some limitations, such as instabilities. It is known that the instability of pristine ZnO is related to the grain boundary defects related to oxygen vacancy and Zn interstitial. [15] Most of pristine ZnO TFTs show negative turn-on voltage owing to its high carrier concentration, which limits the application of the TFTs to gate drivers of active-matrix organic light-emitting diode display. Metal doping in ZnO, such as In, Li, N, F, Al, Ga, Hf, La, Mg, Y, and Zr is proposed to improve the performance and/or stability. [16-23] Many ternary and quaternary metal oxide TFTs are reported to improve both stability and mobility, but the results are not promising. Adamopoulos et al. [24] reported high mobility of ZnO TFT (85 cm 2 V −1 s −1) by Li incorporation on spray pyrolyzed ZrO x gate insulator. The increase in mobility by Li incorporation is due to the increase in grain size, but due to high carrier concentration and defects in semiconductor and interface, the offstate currents are high (10 −8 A). Whereas, Park et al. [25] reported La doping in amorphous IZO TFT which reduces the oxygen deficiency and improves the stability but the mobility is low (≈4.2 cm 2 V −1 s −1). Xifeng et al. [26] reported electron mobility ≈1.94 cm 2 V −1 s −1 by Hf doping in amorphous IZO TFT, where Hf works as carrier suppressor and increases the on/off current ratio by lowering the off-currents. Tue et al. [27] reported the Zr doping in amorphous IZO TFT to control the oxygen vacancies due to its lower slandered electron potential to the off current. Jun et al. [28] reported the La doping in amorphous ZTO TFT to improve the subthreshold swing and on/off current ratio. The electronegativity, ionic radius, and dopant-oxygen bond dissociation energy are important to improve the performance and stability of oxide TFT. As the difference of electronegativity between dopants and oxygen rises, the metaloxygen bond energy increases. Besides, the low standard electrode potential (SEP) of metal ion can decrease the traps due to its binding tendency with oxygen. [29] Higher bond dissociation energy leads to the stronger metal-oxygen network and less oxygen vacancy, which helps to improve the stability of the TFTs. [30] A Gd has lower electronegativity (1.20) compare to Zn (1.65), lower SEP (−2.27 V) compare to Zn (−0.76 V) and higher bond dissociation The simultaneous doping effect of Gadolinium (Gd) and Lithium (Li) on zinc oxide (ZnO) thin-film transistor (TFT) by spray pyrolysis using a ZrO x gate insulator is reported. Li doping in ZnO increases mobility significantly, whereas the presence of Gd improves the stability of the device. The Gd ratio in ZnO is varied from 0% to 20% and the Li ratio from 0% to 10%. The optimized ZnO TFT with codoping of 5% Li and 10% Gd exhibits...

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

See 1 more Smart Citation

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Saha

Bukke

Jang

2020

Adv Elect Materials

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“…The highly overlapped orbitals of SnO 2 is related to large atomic radius, one row below Zn in the periodic table. From the results of DOS and charge density distribution, the higher mobility than the state-of-the-art ZnO TFTs 32 33 is attributed to the highly overlapped s-orbitals of SnO 2 .…”

Section: Resultsmentioning

confidence: 96%

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Shih

Chin

et al. 2016

Sci Rep

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High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

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“…Since the power and cost are main barriers to expand the applications for silicon-based IC, metal-oxide TFTs technology is considered as a promising alternative [2]. Among diverse metal-oxide semiconductors, zinc oxide (ZnO) becomes a novel material candidate as its various advantages, such as transparency, visible-photograph insensitivity, non-toxicity and high abundance [3][4][5][6][7][8]. The most reliable method we explored for ZnO-thin-film deposition is atomic layer deposition (ALD) that can reduce the point defects and enhance the performance of the thin-film devices [9].…”

Section: Introductionmentioning

confidence: 99%

19.5 μW ultra‐low‐power 13.56 MHz RFID tag based on transparent zinc‐oxide thin‐film transistors

Han

et al. 2020

IET Circuits, Devices & Systems

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A novel systematic technological process for ZnO-thin-film transistors (TFTs) fabrication was developed which turned out to achieve near-zero threshold voltage devices with good performance and stability. A deuterium implantation method was realised as well to fabricate depletion n-type ZnO TFTs. The inverters based on enhancement/depletion ZnO TFTs reached nearly full swing (0.01-5 V at 5 V V DD) and pretty large noise margin (V NML = 1.01 and V NMH = 3.61 V). Moreover, a transparent radio-frequency identification (RFID) tag chip based on ZnO TFTs was developed. This tag with an anti-collision algorithm for ISO-14443 type-A was first realised under 5 µm ZnO-TFT technology. The proposed RFID tag exhibits ultra-low-power dissipation of <19.5 µW at 3 V V DD and a reasonable chip area of 4.7 mm 2 .

show abstract

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Cited by 9 publications

References 35 publications

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

19.5 μW ultra‐low‐power 13.56 MHz RFID tag based on transparent zinc‐oxide thin‐film transistors

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