Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs

Abstract

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degradation, drain-induced barrier lowering, velocity overshoot, and quantum effects. Comparison between the compact model and the advanced transport modeling approaches shows good agreement within the practical range of drain voltages.

Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation

“…Surrounding-gate MOSFETs (SRGMOSFETs) has been widely studied as the structure of logic devices to replace the conventional planar MOSFETs in improving the control over the short-channel effects [1][2][3][4]. For more than a decade, SRGMOSFET compact modeling has been an active research area and various types of compact models were reported [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. In its early development, the compact models were obtained for the undoped case by solving the one-dimensional (1D) Poisson's equation that contains only the mobile-charge term [5][6][7][8][9][10][11][12][13][14][15][16][17][18].…”

A compact 2D potential model for subthreshold characterization of nanoscale fully depleted short channel nanowire MOSFETs

“…Compact models for short channel cylindrical surrounding‐gate MOSFET have been proposed in for undoped cases; however, the doping concentration is an important parameter because it can effectively adjust the I–V characteristics, thereafter, a functional model should be with consideration of this parameter. An analytical drain current model reproducing advanced transport models in nanoscale cylindrical NW MOSFET has been proposed in ; however, the model needs fitting parameters to match with simulation's results. Some workers are eager to attach small geometry effects such as velocity saturation and mobility degradation.…”

Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope

“…The numerical simulation and analytical model results are in excellent agreement. Our method includes both the interface trap state distribution and channel doping concentration parameters which is the main advantage of our method over [4][5][6] which either ignore one or the other or both parameters, and Ref. [7] which considers only one interface trap level whilst taking into account channel doping concentration.…”

“…The self-consistent calculation procedure has been explained in our previous work [13]. By using this method, interface trap charge can be applied to compact models of MOSFET or multigate MOSFETs [2,4,5,7,[20][21][22]. Fig.…”

“…Further, most available GAAMOSFET analytical models don't take channel doping into consideration and also ignore the critical interface trap charge parameter [4,5]. In recent times however a few models have come up that do consider interface trap charge and/or channel doping concentration [6,7].…”