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The development of compact models for double-gate (DG) MOSFETs and FinFETs necessary in circuit simulators is an important research field, which allows the efficient practical characterization of these devices, as well as their application in analog circuit design. In this paper we review and assess different approaches for developing core and complete compact models for DG MOSFETs and FinFETs.

For practical applications temperature can play an important role in the performance of a circuit. This paper describes the performance of a Miller Operational Amplifier with FinFET transistors operating in a wide temperature range by circuit simulation. FinFETs were modeled using the Symmetric Doped Double-Gate Model introduced in SmartSPICE circuit simulator calibrated with measured data. Amplifier simulation, performed at 27ºC, 100ºC and 200ºC, reproduced the amplifier behavior and the variation of gain and cutoff frequency.