In this paper, a novel model predictive control (MPC) formulation has been proposed to solve tracking problems, considering a generalized offset cost function. Sufficient conditions on this function are given to ensure the local optimality property. This novel formulation allows to consider as target operation points, states which may be not equilibrium points of the linear systems. In this case, it is proved in this paper that the proposed control law steers the system to an admissible steady state (different to the target) which is optimal with relation to the offset cost function. Therefore, the proposed controller for tracking achieves an optimal closedloop performance during the transient as well as an optimal steady state in case of not admissible target. These properties are illustrated in an example.

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SUMMARYRecently we developed a model for symmetric double-gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1 Â 10 14 to 3 Â 10 18 cm À3 . The model covers a wide range of technological parameters and includes short channel effects. It was validated for different devices using data from simulations, as well as measured in real devices. In this paper, we present the implementation in Verilog-A code of this model, which allows its introduction in commercial simulators. The Verilog-A implementation was optimized to achieve reduction in computational time, as well as good accuracy. Results are compared with data from 2D simulations, showing a very good agreement in all transistor operation regions.

Articles you may be interested inModel of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 100, 033501 (2012); 10.1063/1.3678023 Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors J. Appl. Phys. 109, 084524 (2011); 10.1063/1.3575324 Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device J. Appl. Phys. 109, 084504 (2011); 10.1063/1.3553836Modeling of spin metal-oxide-semiconductor field-effect transistor: A nonequilibrium Green's function approach with spin relaxation J. Appl. Phys.Modeling of gate-induced drain leakage current in n-type metal-oxide-semiconductor field effect transistorRecently, we developed a symmetric doped double gate model for MOSFETs, which includes a direct tunneling model for gate current considering its dependence on the voltages applied to the gate and drain electrodes. Since different tunneling mechanisms can dominate the gate and drain/ source leakage currents depending on the transistor operation regime, the gate stack dimensions and the insulating materials used as gate dielectric, in this work, we analyze and model specific features of such currents in SOI FinFET devices. We present an analytical model which takes into account three main conduction mechanisms of leakage currents associated with the gate structure and is valid for a wide operation range. An improved model to describe the behavior of direct tunneling is proposed to avoid the use of fitting parameters. It is shown that carriers tunneling assisted by trap states in the dielectric material of the overlap regions should be considered, as it can become predominant in the subthreshold regime. Moreover, a band-to-band tunneling model is included because of its large impact on the drain leakage current. The present improved model for gate leakage currents is validated by experimental results obtained on FinFETs with different dimensions, gate dielectric materials and performed under different bias conditions. V C 2013 American Institute of Physics. [http://dx.

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