Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations

We report a novel method to solve the nonlinear 1-D Poisson's equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.Index Terms-Gate-all-around (GAA) nanowire MOSFET, Poisson's equation, spatial variations, surface-field-based model.

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“…According to (9), an alternative form of the oxideinterface boundary condition can be obtained by substituting…”

Section: Drain Current Modelmentioning

confidence: 99%

A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

Cheng

Hong

Kuo

et al. 2014

IEEE Trans. Electron Devices

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“…In order to give a physical insight of NW MOSFETs, analytical model should be derived. In the case of long channel NW MOSFETs, the analytical models have been proposed for undoped and doped cases [3][4][5][6][7][8][9][10][11][12]. However, long channel models lose the accuracy especially in the subthreshold regions.…”

Section: Introductionmentioning

confidence: 99%

A compact 2D potential model for subthreshold characterization of nanoscale fully depleted short channel nanowire MOSFETs

Liu

Jin

Chuai

et al. 2014

Int J Numerical Modelling

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Summary In this work, a compact subthreshold model for fully depleted nanoscale short channel nanowire MOSFETs is proposed. It is based on an approximated solution of two‐dimensional Poisson's Equation in cylindrical coordinate system. It matches well with technology computer‐aided design simulation results in a wide range variation of design parameters without introducing any empirical fitting parameters. Copyright © 2014 John Wiley & Sons, Ltd.

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“…There have been extensive studies on the modeling of nanowire MOSFET device characteristics [10][11][12][13][14][15][16][17][18]. These models provide fundamental ideas for the circuit designers to understand the nanowire SRG device physics and characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…These models provide fundamental ideas for the circuit designers to understand the nanowire SRG device physics and characteristics. In [13], long channel models are presented for SRG MOSFET with intrinsic channel, ignoring short-channel effects. In recent works, Poisson equation was solved to derive an analytical solution for calculating the channel potential and inversion charge of SRG MOSFET.…”

Section: Introductionmentioning

confidence: 99%

“…Ballistic transport based nanowire modeling has been proposed in [17], neglecting more realistic drift-diffusion transport. Although accurate prediction of physical behavior of the device is possible using [9][10][11][12][13][14][15], however they are not quite efficient for large circuit simulations due to their high numerical complexity. All existing SRG MOSFET models may not be computationally efficient since they rely on numerical iteration or look up table to solve the fundamental two-dimensional nonlinear Poisson's equation with the consideration of radial and the axial potential distribution considered.…”

Section: Introductionmentioning

confidence: 99%

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Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model

Sarkar

De²,

Dey

et al. 2012

J Comput Electron

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We report a systematic, quantitative investigation of analog and RF performance of cylindrical surroundinggate (SRG) silicon MOSFET. To derive the model, a pseudotwo-dimensional (2-D) approach applying Gauss's law in the channel region is extended for the cylindrical SRG MOSFET. Based on surface potential approach, expressions of drain current and differential capacitances are obtained analytically. Analog/RF figures of merit of SRG MOSFET are studied, including transconductance efficiency g m /I d , intrinsic gain, output resistance, cutoff frequency f T , maximum oscillation frequency f max and gain bandwidth product GBW. The trends related to their variations along the downscaling of dimension are provided. In order to validate our model, the modeled predictions have been extensively compared with the simulated characteristics obtained from the ATLAS device simulator and a nice agreement is observed with a wide range of geometrical parameters.

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Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations

Cited by 19 publications

References 9 publications

A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

A compact 2D potential model for subthreshold characterization of nanoscale fully depleted short channel nanowire MOSFETs

Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model

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