Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Abstract

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films J. Vac. Sci. Technol. A 33, 01A111 (2015); 10.1116/1.4898434Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation J. Appl. Phys. 114, 144509 (2013) Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 C and effective passivation is still achieved. Samples passivated by AlN fabricated at 150 C show four times higher photoluminescence intensity and longer time-resolved photoluminescence lifetime than ammonia plasma passivated samples. The passivation effect is shown to last for months. The dependence of charge carrier lifetime and integrated photoluminescence intensity on AlN layer thickness is studied using an exponential model to describe the tunneling probability from the near-surface quantum well to the GaAs surface. V C 2012 American Institute of Physics.

Plasma Enhanced Atomic Layer Deposition Passivated HfO₂/AlN/In_0.53Ga_0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

“…Recently, using nitrogen passivation as a pre-gate treatment, good HfO 2 /In 0.53 Ga 0.47 As structure has been presented with low midgap D it and low equivalent oxide thickness (EOT) [4]. Other significant approaches of nitrogen passivation on III-V surfaces, aluminum nitride (AlN), have been proposed by thermal or plasma enhanced atomic layer deposition (PEALD) [5], [6]. Besides, post-gate treatment with fluorine (F) plasma has also been reported to optimize the high-k gate stack [7].…”

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

“…[10][11][12] With the advantages of a self-limiting growth providing precise thickness control, atomic layer deposition (ALD) has recently been developed to deposit AlN at relatively low temperatures. [13][14][15][16][17][18][19][20][21][22][23][24][25][26] The ALD of AlN can be performed by both thermal and plasma-enhanced modes (i.e., thermal ALD and PEALD, respectively). In thermal ALD, ammonia (NH 3 ) is commonly used as an N-source, in combination with various aluminum precursors, such as aluminum trichloride (AlCl 3 ), 13 trimethylaluminum [TMA, Al(CH 3 ) 3 ], [13][14][15] tris(dimethylamido)aluminum (Al 2 [N(CH 3 ) 2 ] 6 ), 16 and triethylaluminum [TEA, Al 2 (C 2 H 5 ) 6 ].…”

“…In contrast, PEALD has been widely applied for depositing AlN films due to enhanced reactivity of the precursors in the presence of plasma, which can significantly reduce the growth temperature (i.e., down to 100-150 C). [18][19][20][21][22][23][24][25][26] The growth rates of ALD AlN are typically in the range of 0.4-1.5 A ˚/cycle. The studies on growth of ALD AlN have demonstrated an increase of the growth rate with increasing substrate temperature, although a narrow temperature window, in which the growth rate of PEALD AlN is temperature independent, has also been observed.…”

(Invited) Passivation of Al2O3/n, p-In0.53Ga0.47 as Interfaces: Influence of Plasma Enhanced Atomic Layer Deposition Aluminum Nitride with Various Plasma Powers

“…However, the integration of III-V compound semiconductor and high dielectric constant materials is still limited by the inherently large amount of defect traps at the interfaces (1,2). Among many interfacial passivation efforts (3,4), PEALD-AlN has been proposed as a passivation method on both the p-GaAs substrates and the GaAs near-surface quantum well (NSQW) structures with unpinning Fermi level (5,6). In this work, we study the influence of PEALD-AlN passivation for both n-type and p-type In 0.53 Ga 0.47 As MOSCAPs by varying the PEALD plasma power.…”