Comparison of cutting performance of ion-plated NbN, ZrN, TiN and (Ti, Al)N coatings

Molarius, Jyrki; Korhonen, Ari; Harju, E.; Lappalainen, Reijo

doi:10.1016/0257-8972(87)90182-4

Cited by 93 publications

(22 citation statements)

References 12 publications

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“…Transition metal nitride coatings such as ZrN/TiN have been extensively studied for industrial applications, such as hard coating [1,2], diffusion barrier in semiconductor technology [3][4][5], optical applications for heat mirrors [6][7][8][9][10] and decorative coatings [11][12][13][14] because of their outstanding properties.…”

Section: Introductionmentioning

confidence: 99%

Studies on zirconium nitride films deposited by reactive magnetron sputtering

Bhuvaneswari

Priya

Chandramani

et al. 2003

Cryst. Res. Technol.

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Key words zirconium nitride/silicon thin films, dc reactive magnetron sputtering, optical constants, electrical resistivity. PACS 81.15.Cd, 68.55, 78.66 This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from 4x10 -5 to 10x10-5 m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of 6x10 -5 mbar showed low electrical resistivity of 1.726x10 -3 Ω.cm. The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively.

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Section: Introductionmentioning

confidence: 99%

Studies on zirconium nitride films deposited by reactive magnetron sputtering

Bhuvaneswari

Priya

Chandramani

et al. 2003

Cryst. Res. Technol.

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“…Thus, they are employed in a wide variety of applications ranging from wear-resistant protective coatings on cutting tools and engine components [5,6] to diffusion barriers in electronic devices [7][8][9][10][11]. The properties and performance of TM nitrides layers ultimately depend on their nanostructure.…”

Section: Introductionmentioning

confidence: 99%

Ti adatom diffusion on TiN(001): Ab initio and classical molecular dynamics simulations

et al. 2014

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Ab initio and classical molecular dynamics (AIMD and CMD) simulations reveal that Ti adatoms on TiN(001) surfaces migrate between neighboring fourfold hollow sites primarily along in-plane <100> channels. <100> and <110> single jumps, as well as <100> double jump rates, obtained directly from MD runs as a function of temperature, are used to determine diffusion activation energies Ea, and attempt frequencies A, for the three preferred Ti adatom migration pathways on TiN(001). From transition rates Aexp[-Ea/(kBT)], we determine adatom surface distribution probabilities as a function of time, which are used to calculate adatom diffusion coefficients Ds(T).AIMD and CMD predictions are consistent and complementary. Using CMD, we investigate the effect on the adatom jump rate of varying the phonon wavelength degrees of freedom by progressively increasing the supercell size. We find that long-wavelength phonons significantly contribute to increasing adatom mobilities at temperatures ≤ 600 K, but not at higher temperatures.Finally, by directly tracking the Ti adatom mean-square displacement during CMD runs, we find that Ti adatom jumps are highly correlated on TiN(001), an effect that yields lower Ds values than those estimated from uncorrelated transition probabilities. The temperature-dependent diffusion coefficient is (T) = (4.5 x 10 -4 cm 2 s -1 ) exp[-0.55 eV/(kBT)].

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“…8 Applications include wear-resistant coatings on high-speed cutting tools 12,13 and engine components, 14,15 diffusion barriers in electronic devices, [16][17][18][19][20] and bioimplant coatings. 21 NaCl-structure TM nitride thin films also have wide single-phase fields, which support large vacancy concentrations on the anion sublattice, resulting in the case of TiN,22 in N/Ti ratios which range from 0.6 to 1.0, 23 allowing room-temperature resistivity of epitaxial TiN(001) layers to be controllably varied from 13 to 190 lX cm (Ref.…”

Section: Introductionmentioning

confidence: 99%

Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

Greczyński¹,

Petrov²,

Greene³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions, indicating that the thin Al capping layers provide stable surface passivation without spallation.

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Comparison of cutting performance of ion-plated NbN, ZrN, TiN and (Ti, Al)N coatings

Cited by 93 publications

References 12 publications

Studies on zirconium nitride films deposited by reactive magnetron sputtering

Studies on zirconium nitride films deposited by reactive magnetron sputtering

Ti adatom diffusion on TiN(001): Ab initio and classical molecular dynamics simulations

Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

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