Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters

Prócel, Luis Miguel; Paredes, Jose Luis; Trojman, Lionel

doi:10.1109/laed.2019.8714738

Cited by 3 publications

(5 citation statements)

References 12 publications

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“…The iPDK's used to run the simulations for planar technology include different nodes, namely 90 and 28/32nm. We also consider non-planar TFET technologies for the advanced nodes where the behavior is provided by the look-up table (LUT) [4]. These ones are built based on IV and CV characteristics obtained from a physics-based model applied to the TCAD-Sentaurus simulator.…”

Section: Technology Topology and Methodsmentioning

confidence: 99%

“…This one supplies a micropower dc signal from a rectified GHz AC signal, or a RF-DC converter connected to an antenna and matching impedance network [3]. In a previous study, we obtained that basic converter designed with ultra-scaled and 3D technologies like FinFET and TFET could improve the performance of over 32nm planar technology [4]. Additionally, we also found out that the choice of a well-optimized topology could significantly influence the metric performance [5].…”

Section: Introductionmentioning

confidence: 99%

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RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Trojman

Rivadeneira

Villegas

et al. 2021

2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS)

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In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage > 300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.

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Section: Technology Topology and Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Trojman

Rivadeneira

Villegas

et al. 2021

2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS)

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“…As a matter of fact, if this one is too high, a large part of the signal is consumed by the transistor, while if it is too low, the reverse current (OFF state) overwhelms the charging process, which results in PCE being lower than expected. Among the different existing topologies [18,19,25], the Cross-Coupled Differential Drive (CCDD) [8,11] might be the best strategy for RF signal rectification. In the CCDD, the peak-to-peak RF signal is applied as a differential input at the gate/source transistor, providing a DC common mode as static bias to overcome the V TH and a differential mode for an active control of the rectification.…”

Section: Topologymentioning

confidence: 99%

“…In our previous studies, we developed a method to size the circuit for a given load and given frequency signal. We applied this method to different technologies such as planar 90 nm and 32 nm and no-planar technologies: FinFET and TFET [11]. Additionally, we also found out that the choice of a well-optimized topology could significantly influence the metric performance [12,13].…”

Section: Introductionmentioning

confidence: 99%

From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

et al. 2022

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In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are designed using either 32 nm or Tunnel-FET (TFET) technology. Commercial PDK has been used for the 32 nm technology, while lookup tables (LUT) resulting from a physics model have been applied for the TFET. To consider the parasitic effects for the circuit performances, the 32 nm-based circuits have been laid out, while a parasitic model has been included in the TFET LUT for circuit implementation. In this work, the post-layout simulations, including parasitic, demonstrate for conventional CCDD circuits that TFET technology has a larger dynamic range (DR) (>60%) and better 1 V-sensitivity than the 32 nm planar technology has. Note that, in this case, the figure of merit defined by the Voltage Conversion Efficiency (VCE) and Power Conversion Efficiency (PCE) remains somewhat similar. On the other hand, topology proposing better VCE at the cost of low PCE shows lower performance than expected in 32 nm than in reported data for larger technology nodes (e.g., 180 nm). The TFET-based circuit shows a PCE of 70%, VCE of 82% with an 8 dB DR (>60%), and the best 1 V-sensitivity in this work. Because of the low-bias condition and the good reverse current blocking (unidirectional channel), the TFET offers new perspectives for RF-DC rectifier/multiplier topology, which are usually limited with planar technology.

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“…Energy harvesting circuits provide the advantage of extending battery life, allowing gadgets to function for longer periods perhaps forever (Procel et al, 2019). Given the features of low voltage and power of micro energy harvesting resources, and also the imbalance among the load and the source's output power level, this additional circuit is necessary.…”

Section: Introductionmentioning

confidence: 99%

An Optimized Energy Harvesting Circuit for Low-Power IoT Applications

Barua

Rasel

2022

MIJST

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The concept and development of an independent energy harvesting mechanism functioning intermittently are described in this paper. A power management circuit (PMC) that is self-regulating, an energy scavenging module, a circuit for charging batteries, as well as an electronic load are all a component of the system that has been proposed. This proposed circuit is designed to attain a fixed output power with a diverse input range. In the unavailability of an additional voltage supply, the PMC can react, maintain, and smartly control the electronic load's power supply. The self-powered energy accumulating technique is expected to be used in situations when supplied power is inadequate to drive the load properly, such as Internet of Things (IoT) applications. IoT is a dispersed architecture of reduced-power, limited-storage, lightweight, and nodes that are adaptive. The majority of embedded IoT devices and low-power IoT sensors are driven by short-life batteries that must be replaced every few years. This procedure is expensive and efficient energy regulation could be critical in enabling energy savings for connecting IoT devices. Experiments with the proposed PMC show that the voltage stored in the capacitor remained mostly fixed at 3.3V at widely diverse inputs that vary from 850mV to 4V. At 3.5V input voltage, a peak efficiency of 88.67% is achieved while the load resistance considered is 230Ω.

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Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters

Cited by 3 publications

References 12 publications

RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

An Optimized Energy Harvesting Circuit for Low-Power IoT Applications

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