Comparison of electrical properties of ZnO-Bi2O3-based ceramics prepared by conventional and spark plasma sintering (SPS) methods

Apaydin, Fatih; Çelik, Ali; Kara, Ferhat; Toplan, H. Özkan

doi:10.1007/s41779-022-00731-4

Cited by 2 publications

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“…where C is a constant, h is Planck's constant, υ is the frequency of light, and hυ is the photon energy of incident light. The E g value is obtained by plotting (αhυ) 2 versus hυ and then extrapolating the linear part of the curve to the horizontal axis [22,26,27]. The (αhυ) 2 ~hυ curves and E g values for the TZO and Bi 2 O 3 films are shown in Figure 6.…”

Section: Optical Properties Of the Tzo/bi2o3 Filmsmentioning

confidence: 99%

“…The resistance value of the varistor is a nonlinear relationship with the voltage at both ends. ZnO-based varistor is a ceramic electronic device with excellent performance which is sintered with ZnO as the main raw material by adding various trace metal oxides, such as Bi 2 O 3 and TiO 2 [1][2][3]. The additive Bi 2 O 3 mainly separates ZnO grains to form a thin layer of bismuth-rich grain boundary.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

et al. 2023

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Ti-doped ZnO (TZO) and Bi2O3 thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi2O3, and TZO/Bi2O3 films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10−3 Ω·cm). However, the Bi2O3 film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 102 Ω·cm). The I–V curve of TZO/Bi2O3 composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi2O3 films.

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