Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

Abstract

The electrical properties of un-doped and lightly Si-doped GaN grown on cand m-plane GaN substrates by metal organic chemical vapor deposition are investigated. The step-flow growth modes are realized for c-and m-plane GaN epitaxial layer. The carbon contamination in the c-plane GaN and mplane GaN, grown at 1120 C and V/III ¼ 1000, are found to be 1.4 Â 10 16 cm À3 and 5.0 Â 10 15 cm À3 , respectively. The m-plane GaN follows a linear correlation between the carrier concentration and the Si atomic concentration. The Ni/n-GaN (Si; 1 Â 10 16 cm À3 ) Schottky vertical diodes on the c-and m-plane GaN substrates reveal that the reverse current-voltage (I-V) curves are fitted by using the thermionic field emission model under the measured carrier concentration and the Schottky barrier height. The leakage current of the m-plane GaN is three orders of magnitude larger than the c-plane GaN, mostly due to the difference in the Schottky barrier height. status solidi physica a Schottky Diodes www.pss-a.com

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

“…46 In addition, Yamada et al reported that Schottky contacts on c-plane GaN had 0.16 V higher barriers than those on the m-plane. 47 Naganawa et al also found a difference of 0.11 V in the barrier height between m-and c-plane contacts. 48 These reported values of barrier height differences are consistent with the value of approximately 0.13 V between the pit-and flat-type contacts obtained in the present study.…”

Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

“…The diode barrier heights are 0.88-0.91 V which is in the high range of reported values in the literature on Ni/GaN Schottky diodes. [9,[26][27][28] The ideality factors are nearly unity (2)…”

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

“…In addition, Yamada et al . reported that Schottky contacts on c -plane GaN had 0.16 V higher barriers than those on the m -plane 50 . Naganawa et al also found a difference of 0.11 V in the barrier height between m - and c -plane contacts 51 .…”

“…A recent study found that the Schottky barrier height for Ni/semipolar (10 1 1) GaN contacts was higher than that for Ni/m-plane GaN contacts 49 . In addition, Yamada et al reported that Schottky contacts on c-plane GaN had 0.16 V higher barriers than those on the m-plane 50 . Naganawa et al also found a difference of 0.11 V in the barrier height between m-and c-plane contacts 51 .…”