Comparison of electronic band structure and optical transparency conditions ofInxGa1−xAs1−y

Abstract

We have investigated the electronic band structure and optical transparency conditions of In x Ga 1−x As 1−y N y / GaAs quantum well ͑QW͒ using 10-band, 8-band and 6-band k • p models. The transition energy calculated by the 8-band model agrees very well with the values calculated by the 10-band model, especially in the range of high indium composition ͑35%͒. Electron effective mass ͑m e * ͒ predicated by band anticrossing model, with nitrogen-related enhancement weakened as indium composition increases, was used in the 8-band model and was favored compared to the heavier value predicted by the phenomenological relationship. We have calculated the optical transition matrix element ͑Q i n c n v ͒ using the Bloch wave functions for the k • p models and discovered that the inclusion of nitrogen-related energy level ͑E N ͒ into the calculation of the conduction band by the 10-band k • p model yields lower differential gain ͑dG / dN͒ than that calculated by the 8-band k • p model on the same structure. Contrary to earlier reports that the reduction of dG / dN in In x Ga 1−x As 1−y N y / GaAs QW and thus the lower obtainable optical gain is due to the increase in m e * , we have concluded that the reduction was due to the increased interaction between the ͉S͘ conduction-band state and ͉S N ͘ nitrogen-related energy state, which weaken the optical transition matrix elements between valence band and conduction band. Our results also show that if m e * is very large ͑as predicted by the phenomenological model͒, dG / dN will increase monotonously with nitrogen composition. Moreover, neglecting valence band and conduction band interaction in k • p models will result in the prediction of higher dG / dN which is not accurate.

Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate

“…The main advantage of BAC model is the fact that analytical formulas obtained within BAC model can be easily incorporated into the kp formalism by extending the 8-band to 10-band kp model [34][35][36]. On the other hand, it has been also shown that in the region of low carrier concentrations, the 8-band kp approach gives very similar material gain spectra as those calculated within the 10-band kp approach [36].…”

“…A conventional method based on the relaxation time approximation convoluted with a Lorentzian function with proper broadening time (0.1ps) was used [34][35][36] to calculate material gain spectra of Ga1-xInxNyAs1-y-, GaNyAs1-y-zSbz-, and GaNyP1-y-zSbz-QW. According to this approximation, the transverse electric (TE) and transverse magnetic (TM) gain is given by ( ) is the overlap integral [34][35][36].…”

Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

“…Model calculations predict an increase in m e * when nitrogen is added to the InGaAs host [3,4] but the magnitude of this increase is significantly different. Furthermore, these theoretical models are not in agreement on how m e * affects the performance of laser diodes, especially in the prediction of the peak differential gain dG/dN [5].…”

“…Model calculations predict an increase in m e * when nitrogen is added to the InGaAs host[3,4] but the magnitude of this increase is significantly different. Furthermore, these theoretical models are not in agreement on how m e * affects the performance of laser diodes, especially in the prediction of the peak differential gain dG/dN [5].In this paper we perform a detailed line shape analysis of the temperature dependent Photoluminescence (PL) spectra of a In 0.4 Ga 0.6 As 1-y N y /GaAs single quantum well (y=0; 0.005) to experimentally determine the e1-hh1 exciton binding energy, and from there derive the conduction band-edge effective mass, m e *. The samples studied here are grown by low-pressure (200 mbar) and low temperature (530 0 C) metal-organic chemical vapor deposition (MOCVD) [1].…”

Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

“…As a novel GaAs-based material system, GaInNAs-based lasers grown on GaAs substrates offer a number of advantages in comparison with current GaInAsP-based lasers grown on InP substrates. The GaInNAs/GaAs system has a larger conduction band discontinuity and therefore provides better electron confinement and characteristic temperature (Henini 2005;Aissat et al 2008;Ng et al 2005). Moreover, this system is compatible with the well developed GaAs/AlAs distributed Bragg reflectors for surface emitting sources.…”