Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Pereira, S.; Watson, I. M.; Neogi, Arup

doi:10.1063/1.4884075

Cited by 8 publications

(10 citation statements)

References 18 publications

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Section: Resultsmentioning

confidence: 99%

“…This electrostatic force has a longer range compared to that of the surface plasmonic field that decreases exponential away from the metal–dielectric interface. However, in a light emitter system where the radiative recombination rate is higher, such as that induced by resonant plasmonic nanoparticles, the influence due to image charge is weaker as the speed of the drift and diffusion toward the metal nanoparticles is significantly slower than the e–h recombination rate …”

Section: Resultsmentioning

confidence: 99%

“…However, in a light emitter system where the radiative recombination rate is higher, such as that induced by resonant plasmonic nanoparticles, the influence due to image charge is weaker as the speed of the drift and diffusion toward the metal nanoparticles is significantly slower than the e−h recombination rate. 35 Enhancement of Near-UV Light Emission from ZnO Bulk Semiconductors. The GaAs quantum well shown in Figure 1A,B represents a particularly "ideal" semiconductor heterostructure with a low concentration of structural defects, high carrier mobility, and well-defined shape of the metallic inclusions.…”

Section: ■ Introductionmentioning

confidence: 99%

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Metallic Nanodroplet Induced Coulomb Catalysis for Off-Resonant Plasmonic Enhancement of Photoemission in Semiconductors

et al. 2016

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The enhancement of light from semiconductors due to surface plasmons coupled resonantly to its emission is limited because of dissipation in the metal and is also restricted by the dielectric characteristics and homogeneity of the metal–semiconductor interface. We report a new mechanism based on electrostatic interactions of carriers and their image charges in metals to generate more photons from optical sources at frequencies that are off-resonant to the localized plasmon frequency. Coulomb catalysis of carrier accumulation resulting from the inhomogeneity of metal nanodroplets on a semiconductor’s surface can result in an enhancement of light that is nondissipative and does not require resonant coupling of plasmons to the emission wavelength. The enhancement occurs because of an increase in the ratio of radiative to nonradiative recombination in the vicinity of metal nanoparticles. It is equally effective with any type of metal and enhances radiation at any frequency, a property that is of principal importance for the realization of widely tunable semiconductor emitters. This fundamental mechanism provides a new perspective for improving the efficiency of light emitters and controlling carrier concentration on the nanoscale. The structural characteristics of the hybrid metal–semiconductor emitters are studied using electron microscopy and atomic force microscopy. We demonstrate the electrostatic mechanism by studying steady-state and transient photoluminescence from two-dimensional semiconductors, such as GaAs/AlGAs quantum wells, and bulk semiconductors, such as ZnO thin films, emitting in the near-IR and UV wavelength regimes, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Metallic Nanodroplet Induced Coulomb Catalysis for Off-Resonant Plasmonic Enhancement of Photoemission in Semiconductors

et al. 2016

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“…Recent studies have suggested that the electrostatic properties of metal NPs can enhance the IQE through the image charge effect of metal NPs, and one of the characteristics of this effect is the increased PL lifetime. 27,28 With LSPR of the GaN/Ag system far detuned from the QW emission wavelength (see Fig. 3), and with the increased PL lifetime, the image charge effect is expected to be the cause behind the observed PL enhancement.…”

Section: Effect Of Ag Nanoparticlesmentioning

confidence: 99%

Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters

Fadil

Iida

et al. 2016

Nanoscale

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Surface plasmon coupling with light-emitters and surface nano-patterning have widely been used separately to improve low efficiency InGaN light-emitting diodes. We demonstrate a method where dielectric nano-patterning and Ag nanoparticles (NPs) are combined to provide both light extraction and internal quantum efficiency enhancement for InGaN/GaN quantum-well light-emitters. By fabricating dielectric nano-rod pattern on the GaN surface, an optical coating that improves the light extraction is obtained, and furthermore has a low refractive index which blue-shifts the plasmonic resonance of Ag NPs towards the emission wavelength. We investigate emission components from both the GaN and sapphire surface of the semiconductor crystal and show that Ag NPs on dielectric nano-pattern compared to a planar surface, result in a stronger enhancement.

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“…Fortunately, Au nanoparticles (NPs) have the capacity to improve the performances of optoelectronic devices [5], [6], owing to their superior ability to modify the optical, electrical, and thermal properties of the surrounding medium. Au NPs can interact with resonant photons through localized surface plasmon resonance (LSPR) [7], [8], thus exhibiting a remarkably enhanced response in surface-enhanced Raman spectroscopy [9], [10] and photoluminescence spectroscopy [11], [12]. In addition, the work function difference between Au and Ge, as well as the electrostatic effect of image charges in Au NPs, can modify the energy band below the Au NP/Ge interface, thus modulating the electronic transport and light-matter interaction in Ge.…”

mentioning

confidence: 99%

Hysteresis Behavior and Photoresponse Enhancement in Au Nanoparticle-Decorated Ge Photodetectors

Wang

Zhang

Wang

et al. 2021

IEEE Trans. Electron Devices

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Au nanoparticles (NPs) were drop-casted onto germanium (Ge) devices to investigate the influence of Au NPs on the electronic transport and photodetection properties of Ge metal-semiconductor-metal photodetectors. A significant hysteresis behavior was observed in the current-voltage curves of the Au NP-decorated Ge photodetector, which was ascribed to the energy band bending below the Au NPs and the electrostatic effect of image charges in the Au NPs. More interestingly, at the optical communication wavelength of 1.55 µm, the introduction of Au NPs effectively improved the responsivity of the device from 0.18 to 0.92 A/W. Rather than the localized surface plasmon resonance effect, the increase of responsivity in the Au NP-decorated Ge photodetector was caused by a type-II liked energy band alignment, which enhanced the spatial electron-hole separation effect. These results provide inspiration for the development of novel optoelectronic devices. Index Terms-Au nanoparticles (NPs), electric hysteresis loop, electrostatic effect, germanium (Ge) photodetector, photoresponse enhancement. I. INTRODUCTIONG ERMANIUM (Ge) is one of the most promising materials for near-infrared detection [1], [2], owing to the small bandgap (0.67 eV) and the better compatibility with Si-CMOS processes as compared with III−V and II-VI semiconductor materials. However, the low absorption coefficient of Ge material near 1.55 μm, which is attributed to the direct bandgap of 0.8 eV, is still a major obstacle for its application in optical communication [3], [4].

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Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

Cited by 8 publications

References 18 publications

Metallic Nanodroplet Induced Coulomb Catalysis for Off-Resonant Plasmonic Enhancement of Photoemission in Semiconductors

Metallic Nanodroplet Induced Coulomb Catalysis for Off-Resonant Plasmonic Enhancement of Photoemission in Semiconductors

Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters

Hysteresis Behavior and Photoresponse Enhancement in Au Nanoparticle-Decorated Ge Photodetectors

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