Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness

Abstract

Effects of nonuniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InPbased multiple quantum well laser

Accurate model of InxGa1−xAsyP1−y/InP active waveguides for optimal design of switches

“…In fact, many theoretical and experimental contributions have shown the realization of long-wavelength semiconductor lasers (1300-1550 nm) to be feasible, especially on InGaAsP quaternary alloy systems. More precisely, a lot of effort has been made regarding quantum well devices because they offer improvements to both the carrier confinement and the performance, owing to the modified density of the states and the band edge [5].…”