Comparison of H2and NH3Treatments for Copper Interconnects

Chang, Yu‐Min; Leu, Jihperng; Lin, Bing-Hong; Wang, Ying-Lung; Cheng, Yi-Lung

doi:10.1155/2013/825195

Cited by 12 publications

(7 citation statements)

References 18 publications

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“…Deconvolution resulted in two peaks at 398.5 and 399.2 eV corresponding to N in g-C 3 N 4 , and the peak at 399.2 eV indicates the presence of Cu–N species in the composite in perfect agreement with earlier reports. 57 Further, the peak at about 401.0 eV could be due to the remaining amino groups present on the surface of the composite.…”

Section: Resultsmentioning

confidence: 98%

g-C₃N₄-Mediated Synthesis of Cu₂O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

2019

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A highly porous architecture of graphitic carbon nitride g-C3N4/Cu2O nanocomposite in the form of cubes with a side length of ≈ 1 μm, large pores of 1.5 nm, and a high surface area of 9.12 m2/g was realized by an optimized in situ synthesis protocol. The synthesis protocol involves dispersing a suitable “Cu” precursor into a highly exfoliated g-C3N4 suspension and initiating the reaction for the formation of Cu2O. Systematic optimization of the conditions and compositions resulted in a highly crystalline g-C3N4/Cu2O composite. In the absence of g-C3N4, the Cu2O particles assemble into cubes with a size of around 300 nm and are devoid of pores. Detailed structural and morphological evaluations by powder X-ray diffraction and field emission scanning electron microscopy revealed the presence of highly exfoliated g-C3N4, which is responsible for the formation of the porous architecture in the cube like assembly of the composite. The micrographs clearly reveal the porous structure of the composite that retains the cubic shape of Cu2O, and the energy-dispersive spectroscopy supports the presence of g-C3N4 within the cubic morphology. Among the different g-C3N4/Cu2O compositions, CN/Cu-5 with 10% of g-C3N4, which is also the optimum composition resulting in a porous cubic morphology, shows the best visible light photocatalytic performance. This has been supported by the ultraviolet diffuse reflectance spectroscopy (UV-DRS) studies of the composite which shows a band gap of around 2.05 eV. The improved photocatalytic performance of the composite could be attributed to the highly porous morphology along with the suitable optical band gap in the visible region of the solar spectrum. The optimized composite, CN/Cu-5, demonstrates a visible light degradation of 81% for Methylene Blue (MB) and 85.3% for Rhodamine-B (RhB) in 120 min. The decrease in the catalyst performance even after three repeated cycles is less than 5% for both MB and RhB dyes. The rate constant for MB and RhB degradation is six and eight times higher with CN/Cu-5 when compared with the pure Cu2O catalyst. To validate our claim that the dye degradation is not merely decolorization, liquid chromatography–mass spectroscopy studies were carried out, and the end products of the degraded dyes were identified.

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Section: Resultsmentioning

confidence: 98%

g-C₃N₄-Mediated Synthesis of Cu₂O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

2019

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“…Hydrogen (H) atom is typically the reducing agent. Hence, H 2 or NH 3 is widely used reduction gas [60][61][62]. The chemical clean is processed under a plasma process, which increases the activity of the reaction.…”

Section: Cu Oxidationmentioning

confidence: 99%

Copper Metal for Semiconductor Interconnects

Cheng¹,

Lee²,

Huang³

2018

Noble and Precious Metals - Properties, Nanoscale Effects and Applications

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Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.

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“…The reduction in the OH concentration reveals the reduction of the oxygen radicals (as a result of the oxide reduction). Nevertheless, as the copper oxide cannot be completely removed, the peak does not decrease more with further treatment [43]. Figure 5(a) shows the copper foil used as a substrate before (up and down sample) and after (medium sample) the hydrogen etching and the graphene growth.…”

Section: Copper Oxide Reductionmentioning

confidence: 99%

Growth Study and Characterization of Single-Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapour Deposition

Chaitoglou¹

2017

Graphene Materials - Structure, Properties and Modifications

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Currently, the graphene industry is moving forward to the import of graphene in a number of novel applications. To take full advantage of the excellent properties of the material, the standardization of the growth process is an emergency. The suitable growth technique should ensure the high yield, accompanied by high quality of single-layer graphene sheets. Chemical vapour deposition is the technology that fulfils the above requirements, promoting the growth of largescale graphene films through automatized processes. In the present chapter, we present the latest advances in this field, summarizing the most recent publication activity of the authors. The results outline how the control in the growth process over parameters like the gases flow, growth temperature and pressure can affect the nucleation density of graphene domains, the growth rate and percent coverage. Growth of graphene domains with different morphologies depends on the crystallographic orientation of the copper lattice. At the same time, the formation of ripples occurs in the graphene surface as a result of the copper foil compression during the cooling step. These ripples are responsible for the appearance of a compressive stress in the graphene sheets. We demonstrate the control over such stress through the variation in the hydrogen flow during the growth.

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Comparison of H₂and NH₃Treatments for Copper Interconnects

Cited by 12 publications

References 18 publications

g-C₃N₄-Mediated Synthesis of Cu₂O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

g-C₃N₄-Mediated Synthesis of Cu₂O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

Copper Metal for Semiconductor Interconnects

Growth Study and Characterization of Single-Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapour Deposition

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Comparison of H2and NH3Treatments for Copper Interconnects

Cited by 12 publications

References 18 publications

g-C3N4-Mediated Synthesis of Cu2O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

g-C3N4-Mediated Synthesis of Cu2O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

Copper Metal for Semiconductor Interconnects

Growth Study and Characterization of Single-Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapour Deposition

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Product

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Comparison of H₂and NH₃Treatments for Copper Interconnects

g-C₃N₄-Mediated Synthesis of Cu₂O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes

g-C₃N₄-Mediated Synthesis of Cu₂O To Obtain Porous Composites with Improved Visible Light Photocatalytic Degradation of Organic Dyes