Room temperature calibrations of the interstitial oxygen infrared absorption bands in single-ciwstal silicon at 1106 and 515 cm-', using the technique of gamma photon activation analysis are reported. Attempts have been made to assess the accuracy of both techniques. An integrated area method, appropriate to device quality wafers, is reported in addition to the conventional peak height calibration at 1106 cm -~. At 30~ the calibration constant for the peak height of the 1106 cm -1 band is 2.61 +/-0.3 x 10 '7 at.-cm-~; the integrated area calibration of the 1106 cm-' band at 30~ is 1.83 +/-0.2 • 10 TM at.-cm -~. The integrated area calibration constant for the 515 cm-' band at 30~ is 1.06 +/-0.1 • 10 '7 at.-cm -I. Temperature coefficients of the calibration constants have been determined close to spectrometer ambient.