Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides

Zander, D.

doi:10.1016/j.microrel.2004.10.024

Cited by 1 publication

(1 citation statement)

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“…On the other hand, in a previous work [15,23] on samples of the same technology, it has been shown that with a 1.8 nm thick oxide MOSFET with W/L = 50 µm/1 µm, it is possible to create many more interface traps after channel hot carrier (CHC) injections than after DT injections. Figures 5(a) and (b) show that a LVSILC is observable after CHC injections, when t ox is equal to 1.2 nm and 1.8 nm, respectively.…”

Section: Interface Traps (N It ) and Lvsilcmentioning

confidence: 99%

Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2–2.5 nm) after constant voltage stresses

Petit¹,

Zander²

2007

Semicond. Sci. Technol.

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It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

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Section: Interface Traps (N It ) and Lvsilcmentioning

confidence: 99%