Coadministration of PHiD-CV with commonly used childhood vaccines induced high levels of seroprotection/seropositivity against all targeted diseases. No evidence of negative interference on the immune response to any of the coadministered vaccine antigens was observed when compared with the current routine practice of 7vCRM coadministration.

It has been shown recently that the low voltage gate current in ultrathin oxide metal–oxide–semiconductor devices is very sensitive to electrical stresses. Therefore it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. This paper presents a thorough study of the low voltage gate current variation for different uniformed or localized electrical stress conditions at or above room temperature, and for various oxide thicknesses ranging from 1.2 to 2.5 nm. As it has been proposed recently that this current could be due to electron tunneling through Si/SiO2 interface states, the results obtained in the thicker oxides for the gate current have been compared with the corresponding surface state density variations measured by charge pumping. It is shown that there is no clear relation between low voltage gate current increase after stress and that of surface state density, and that soft or hard oxide breakdown happens when the low voltage current reaches a critical value independently of the stress created interface state density.

Articles you may be interested inEllipsometric study of the polysilicon/thin oxide/single-crystalline silicon structure and its change upon annealing Boron penetration and thermal instability of p + polycrystalline-Si/ZrO 2 / SiO 2 /n-Si metal-oxide-semiconductor structures J. Appl. Phys. 91, 65 (2002); 10.1063/1.1419207 Effects of interface roughness and conducting filaments in metal-oxide-semiconductor tunnel structuresFowler-Nordheim current in Si-poly (n ϩ )-SiO 2 -Si(p) structures, with an oxide thickness varying between 3 and 12 nm, has been measured and numerically computed with the exact electric field in the oxide, the field dependence of the barrier shape with the image force, and the temperature effects. The fit of the experimental data leads to an accurate determination of the electron affinity difference and the barrier height at the emitting Si-poly (n ϩ )-gate-electrode-oxide interface. The evolution of these two parameters with temperature is discussed in relation with the oxide thickness.

We studied the influence of the end group of the alkylsilane molecule used in Self Assembled Monolayer (SAM) in Silicon/SAM/Metal junctions. By Inelastic Electron Tunneling spectroscopy (IETS), we showed the formation of a covalent bond between the molecules and the gold electrode in the case of a thiol terminated alkylsilane. By electrical characterizations, we demonstrated that the thiol group at the interface avoids diffusion of gold into the molecule even for a 3 carbons chain. For this short molecule, we observed pure tunnel conduction with barrier height at the monolayer/Si and monolayer/Au interfaces found to be respectively 2.14 and 2.56 eV. These values were obtained using Simmons equation with an effective mass parameter m* = 0.16m e (m e = mass of the electron).This extends the demonstration of the excellent tunnel dielectric behavior of these organic monolayers down to 3 carbon atoms with a thiol/Au bond at the interface.