Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination

Abstract

Articles you may be interested inEllipsometric study of the polysilicon/thin oxide/single-crystalline silicon structure and its change upon annealing Boron penetration and thermal instability of p + polycrystalline-Si/ZrO 2 / SiO 2 /n-Si metal-oxide-semiconductor structures J. Appl. Phys. 91, 65 (2002); 10.1063/1.1419207 Effects of interface roughness and conducting filaments in metal-oxide-semiconductor tunnel structuresFowler-Nordheim current in Si-poly (n ϩ )-SiO 2 -Si(p) structures, with an oxide thickness varying between 3 and 12 nm, has been measured and numerically computed with the exact electric field in the oxide, the field dependence of the barrier shape with the image force, and the temperature effects. The fit of the experimental data leads to an accurate determination of the electron affinity difference and the barrier height at the emitting Si-poly (n ϩ )-gate-electrode-oxide interface. The evolution of these two parameters with temperature is discussed in relation with the oxide thickness.

Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

“…7 shows the simulations using u 0 ¼ 2:7 eV and c ¼ À2:9Â10 À3 eV K À1 . This latter value is in close agreement with the temperature coefficient associated with Fowler-Nordheim (FN) conduction in fresh MOS devices ()10 À4 to )10 À3 eV K À1 ) [11]. The connection between SBD and FN was already pointed out in [12] and further explored in [9].…”

Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2∕Si interface

“…17 In addition, other effects such as the temperature dependence of the F-N tunneling current, 18,21 the barrier height variation with the oxide thickness, 17,18 and the dependence of the effective mass on oxide thickness, 19,20 may need to be taken into account. Several approximate expressions have been proposed to take into account the temperature dependence 17,18,21,22 and the image force effect. 17 In the present study, for simplicity, we use the above simple expression, i.e., Eqs.…”

Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area

“…Hadjadj et al 22 obtained barrier heights with respect to temperature changes just by taking a constant effective electron mass of 0.5m e for samples whose thicknesses were changing between 3.5 and 12 nm, and they showed that barrier height was decreased when the temperature was increased.…”

“…32 Khairurrijal et al 33 showed from their theoretical calculations that the effective mass of electrons in SiO 2 oxide film increases when the oxide thickness gets decreased, having a value between 0.3m e and 0.9m e . Upon assuming constant electron effective mass at 0.5m e in oxide film, Hadjadj et al 22 added the effect of oxide thickness on electron affinity difference for 5, 7, and 12 nm thick oxides for the temperature ranging from 23 to 300°C. They concluded that not only the temperature but also the oxide thickness had an effect on electron affinity difference and barrier height values under the used assumption of 0.5m e for effective electron mass.…”

“…Therefore, we can only compare our RT results to the literature data and detect that we obtained considerably good results. 15,22 In this work, we additionally added effect of high substrate temperatures on the barrier height and effective mass in a large range from RT to 110°C for SiO 2 and 130°C for nitrided oxide.…”