Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2∕Si interface

Ng, C. Y.; Chen, T. P.; Liu, Y.; Sun, Chang Q.; Fung, S.

doi:10.1063/1.1805715

Cited by 19 publications

(17 citation statements)

References 20 publications

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“…In the TC calculations, the effective electron mass and the barrier height of SiO 2 were chosen as 0.5m 0 (m 0 is freeelectron mass) and 3.0 eV, respectively, according to [11] and its references. For Si(100) surface, the effective mass of an electron along the direction perpendicular to plane and in the plane were chosen as 0.432m 0 and 0.341m 0 , respectively, according to [12].…”

Section: Resultsmentioning

confidence: 99%

The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs

Mao

2007

IEEE Electron Device Lett.

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A model is established to describe how the injectionchannel electron velocity of nanometer MOSFETs affects the gate leakage current in the regime of diffusive to ballistic transition. The results show that the coupling between the transverse and the longitudinal components of electron motion largely affects the gate leakage current when the electron velocity is higher than the thermal injection velocity (1 × 10 7 cm/s). It suggests that due to the ballistic transport, the coupling effect should be considered for the gate leakage current of nanoscale MOSFETs, if the channel electrons reach a higher velocity.

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Section: Resultsmentioning

confidence: 99%

The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs

Mao

2007

IEEE Electron Device Lett.

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“…Also, the conduction band offset is much smaller than the valance band offset, so that the program speed is less sensitive to the erase speed [14]. A similar influence of nitrogen on tunneling barrier height has been reported in Si/SiO 2 (or Si/SiON) systems [17][18][19]. With increasing nitrogen concentration, the barrier heights for both electrons and holes decrease but the reduction of hole barrier height is larger than an electron.…”

Section: Device Design and Fabricationmentioning

confidence: 92%

Tunneling oxide engineering by ion implantation of nitrogen for 3D vertical silicon pillar SONOS flash memory

Yang

Lee

et al. 2013

Microelectronic Engineering

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“…As mentioned in Sect. 3.2, Hf incorporation decreases the effective mass, while nitrogen incorporation into SiO 2 network increases it [104,105]. The effective mass should be evaluated for HfSiON before concluding the F.O.M.…”

Section: Hafnium-nitrogen-based Gate Dielectricsmentioning

confidence: 99%

Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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In this chapter, we focus on hafnium-based gate dielectrics. HfO 2 is regarded as the most promising material for the high-k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO 2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO 2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO 2 , transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter. Introductory Remarks and Brief Outline of the ChapterSince the proposal of the materials in the early 2000s [1-3], hafnium-based gate dielectrics have been regarded as the most promising materials for the application to large scale integrations (LSIs). In 2007, Intel announced the start of manufacturing of 45 nm-node LSIs with high-k/metal gate stack, with the remark that the world's first high-k material in commercial production was hafnium-based [4].There are several characteristics that the high-k materials should meet for the application to metal oxide semiconductor field effect transistors (MOSFETs) in LSIs. First, we clarify the properties so that readers can understand their A. Nishiyama

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Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2∕Si interface

Cited by 19 publications

References 20 publications

The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs

The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs

Tunneling oxide engineering by ion implantation of nitrogen for 3D vertical silicon pillar SONOS flash memory

Hafnium-Based Gate Dielectric Materials

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