Comparison of laser diode response to pulsed electrical and radiative excitations

Baggio, J.; Rainsant, J.M.; D'hose, C.; Lalande, P.; Musseau, O.; Leray, J.L.

doi:10.1109/23.556898

Cited by 7 publications

(6 citation statements)

References 8 publications

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“…Due to the shape of the laser diode cavity (rectangular parallelepiped 300*3 *0 1 irn3) the direction of incidence of ion beam in accelerator testing will be a key parameter to determine the LET threshold to induce bit errors. The number n of carriers generated by the laser pulse in the InGaAsP cavity is given by n=g0xDxTxV (2) Where gO is the generation factor in InGaAsP 9.5 iO' (cm3rad1) D is the laser equivalent dose rate lO'2rad(Si)/s (determined with a silicon photodiode) T is the laser pulse duration : 30 ps V is the volume ofthe cavity 90 1012cm3 a total number of n=1 .7 1 O electron-hole pairs is large enough to induce a transient perturbation of the laser cay ity leading to a bit error in the optical link. In a worst case 4 MeV/amu 208Pb ions passing through the cavity thickness (0.…”

Section: Error Generation By Laser Irradiationmentioning

confidence: 99%

Reliability of 1300-nm laser diode for space applications

et al. 1999

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The use of electro-optic devices for high speed digital links in space on-board systems or high bandwidth analogue links for diagnostics in large physics experiments could be limited by their reliability in radiative environment. The technology of emitters, and specially the laser diodes, is in rapid progress, driven by ground applications such as telecommunication systems. New structures created to increase performances introduce radiation sensitive areas.In space applications, particles (protons, heavy ions) can induce permanent damages as well as transient errors. Thus it is of major interest to study the vulnerability of new laser diodes structure to single particles and determine their role in the reliability of a whole data link.A transmission data link has been simulated using a high speed digital signal to modulate a 1300 nm laser diode. A Nd:YAG laser was used to simulate ionizing effects induced by transient particle irradiation on the laser diode by creating carriers only in the laser cavity. With this method, calibration of ionizing effects, error amplitude and influence of operational parameters of the link (frequency, amplitude of modulation...) have been studied. Heavy ions at different energies have been used to confirm transient effects, but the perturbation duration, too short compared with the Nd:YAG, have limited observation of the transient error due to ionizing effects. Permanent damages have been observed and their origin linked with the particle.

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Section: Error Generation By Laser Irradiationmentioning

confidence: 99%

Reliability of 1300-nm laser diode for space applications

et al. 1999

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“…The evaluations are common these materials prove in different tests to modify the form and composition, resulting in the production of new materials [3]. Nondestructive testing is any type of evaluation which is not permanently changes on physical, chemical, mechanical and dimensional properties of materials.…”

Section: Non-destructive Testingmentioning

confidence: 99%

Control Prototype Excitation Laser Diodes Using Differencial Pair Transistor Configuration And Interface

Alfonso¹

2014

IOSRJEN

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This paper describe the design and construction of a electronic prototype of system control power of laser diodes, specifically the design mainly on the laser diode whose wavelength is 532 nm and the beam is visble spectrum, and the use a photodiode in the same wavelengh. Mainly the power stability of the laser diode this based on the If current flowing through the photodiode, and likewise: If the transmission power of the laser diode increased o viceversa. The power control by the user will be monitored by an interface with a microcontroller together will be used to maintain the required power using the configuration Par Differential of the bipolar transistors. Finally to through this configuration we can power control of the diode laser, varying the voltage of one of the transistors of the array

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“…31 At a critical ionizing irradiation (from electron beams rather than gamma rays) dose rate of about 10 11 to 10 12 rad(Si)·s -1 , the net current density of a laser diode decreases to J th , and lasing is temporarily interrupted. 29,32 After the end of the radiation pulse, lasing resumes; the optical power at first overshoots its original level, then experiences relaxation oscillations before steady-state operation is restored. These results agree with the effects observed for pulsed X-rays (see below).…”

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confidence: 99%

“…Even though this process would tend to produce a positive photocurrent in the laser cavity, the effect of a simultaneous radiation-induced reduction of the resistivity of the confinement regions is larger and leads to a net decrease in current density, due to carrier leakage from the active volume. 29,30 The higher the dose rate, the larger the resistivity decrease in the confinement areas. 31 At a critical ionizing irradiation (from electron beams rather than gamma rays) dose rate of about 10 11 to 10 12 rad(Si)·s -1 , the net current density of a laser diode decreases to J th , and lasing is temporarily interrupted.…”

mentioning

confidence: 99%

“…At a dose rate of about 10 10 rad(Si)·s -1 , there is also a small shift in the emission spectrum toward shorter wavelengths. 29 It may be mentioned here that visible and infrared laser irradiation has been used for many years to simulate the transient effects of radiation pulses on semiconductors. In fact, the first such study, 33 which appeared in 1965, was performed at Sandia.…”

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Effects of radiation on laser diodes.

Phifer

2004

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The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-doserate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.3

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Comparison of laser diode response to pulsed electrical and radiative excitations

Cited by 7 publications

References 8 publications

Reliability of 1300-nm laser diode for space applications

Reliability of 1300-nm laser diode for space applications

Control Prototype Excitation Laser Diodes Using Differencial Pair Transistor Configuration And Interface

Effects of radiation on laser diodes.

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