Comparison of nonlinear optical properties of sulfide glasses in bulk and thin film form

Cerqua-Richardson, K.A.; McKinley, Jennifer; Lawrence, Brian; Joshi, S.C.; Villeneuve, A.

doi:10.1016/s0925-3467(97)00142-0

Cited by 96 publications

(48 citation statements)

References 14 publications

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“…Figure 3 shows obtained ␤ ͑solid circles͒ together with previous results. 5,[7][8][9][10][11]15 Except for the results reported by Fork 7 and Nasyrov, 15 the agreement between the present spectrum and the previous data appears to be satisfactory. The reason why the two results markedly deviate from the present and others is not known.…”

supporting

confidence: 56%

Two-photon absorption spectroscopy of As2S3 glass

Tanaka

2002

Applied Physics Letters

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supporting

confidence: 56%

Two-photon absorption spectroscopy of As2S3 glass

Tanaka

2002

Applied Physics Letters

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“…The optical gap of 2.26 eV is slightly lower than that of 2.35-2.37 eV obtained for thermally evaporated films. 26,27 The band edge shift toward longer wavelengths in laser-deposited films is consistent with the fact that the films have been exposed to scattered laser light during the deposition. The value reported in Ref.…”

Section: Resultsmentioning

confidence: 54%

Low-loss waveguides in ultrafast laser-deposited As_2S_3 chalcogenide films

et al. 2003

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“…We have found wavelength-dependent measurements of the nonlinear index, n 2 , for arsenic sulfide from different data sources [150,[165][166][167][168][169][170][171][172][173][174]. As shown in Figure 3, although slightly scattered, these n 2 values in arsenic sulfide are as high as those in silicon and would not be strongly wavelength-dependent beyond 1.55 µm, because it is longer than the half-bandgap wavelength.…”

Section: Methodsmentioning

confidence: 92%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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Comparison of nonlinear optical properties of sulfide glasses in bulk and thin film form

Cited by 96 publications

References 14 publications

Two-photon absorption spectroscopy of As2S3 glass

Two-photon absorption spectroscopy of As2S3 glass

Low-loss waveguides in ultrafast laser-deposited As_2S_3 chalcogenide films

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

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