2011
DOI: 10.1149/1.3583534
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Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

Abstract: Nano-floating gate memory devices were fabricated by using nickel nanocrystals as a charge-trapping portion embedded into Al 2 O 3 thin films. Ni nanocrystals were prepared via a thermal reduction of nanoscale NiO layers deposited by atomic layer deposition. Although the continuous deposition of insulating Al 2 O 3 and semiconducting NiO thin films allowed the facile fabrication of charge-trap, the corresponding retention feature suffers from inferior charge trapping/detrapping. On the other hand, the Ni nanoc… Show more

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Cited by 6 publications
(2 citation statements)
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“…Generally, NiO ALD processes have suffered from low GPCs with very few reports of greater than 0.05 nm/cycle (see Table ). We find that the GPC in the present work is among the highest of reported values for NiO, with reports of 0.13–0.14 nm/cycle for the Ni­(dmamb) 2 + H 2 O process ,, and 0.2 nm/cycle for the Ni­(acac)­2­(TMEDA) + O 3 process . However, both processes appear to exhibit a rather slow reaction kinetics with the Ni­(dmamb) 2 + H 2 O process space requiring long H 2 O and Ni­(dmamb) 2 pulses of >10 and >6 s, respectively, and the Ni­(acac) 2 (TMEDA) and O 3 process requiring a >4 s Ni­(acac) 2 (TMEDA) dose to reach saturating growth conditions.…”
Section: Discussionsupporting
confidence: 47%
“…Generally, NiO ALD processes have suffered from low GPCs with very few reports of greater than 0.05 nm/cycle (see Table ). We find that the GPC in the present work is among the highest of reported values for NiO, with reports of 0.13–0.14 nm/cycle for the Ni­(dmamb) 2 + H 2 O process ,, and 0.2 nm/cycle for the Ni­(acac)­2­(TMEDA) + O 3 process . However, both processes appear to exhibit a rather slow reaction kinetics with the Ni­(dmamb) 2 + H 2 O process space requiring long H 2 O and Ni­(dmamb) 2 pulses of >10 and >6 s, respectively, and the Ni­(acac) 2 (TMEDA) and O 3 process requiring a >4 s Ni­(acac) 2 (TMEDA) dose to reach saturating growth conditions.…”
Section: Discussionsupporting
confidence: 47%
“…1 Compared to semi-conductive (Si,Ge) 2,3 and organic (C, graphene) 4,5 charge storage candidates, noble metal nanoparticles (Pt, 6 Au 7 and Ag 8 ) embedded in oxide dielectric films (Al 2 O 3 , HfO x , ZrO 2 , TiO 2 , HfAlO x ) have been highlighted due to their high work function and excellent charge properties, but they are not suitable for large-scale industrial applications due to their high cost. Ni nanocrystals (Ni-NCs) has a high work function of 5.35 eV, 9 stable chemical properties, and have been reported to exhibit a memory window width (flat-band voltage shift |∆ V FB |) ranging from 1 to 20 V, [10][11][12][13][14][15][16] showing excellent charge storage capacity. However, due to the oxidization of Ni-NCs in oxide matrix and diversify of nickel oxides, the endurance and retention properties for Ni-NCs-based memory cell need to be further improved.…”
Section: Introductionmentioning
confidence: 99%