2007
DOI: 10.1016/j.tsf.2006.12.154
|View full text |Cite
|
Sign up to set email alerts
|

Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I–V–T measurements

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2008
2008
2016
2016

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 9 publications
(3 citation statements)
references
References 17 publications
0
3
0
Order By: Relevance
“…Thus, the temperature dependence of the ideality factor (n 1 ) and the saturation current density (J 01 ) of the main diode (D1) are obtained for the cell 1 from the dark forward bias J (V, T) data by an automated least squares variational minimisation fitting procedure described in [7,8]. Also, as mentioned above the dark forward bias current of the cell 2 features only one branch (D2), and the J (V, T) characteristics are therefore analyzed by a single diode circuit model to extract the corresponding ideality factor and saturation current density.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the temperature dependence of the ideality factor (n 1 ) and the saturation current density (J 01 ) of the main diode (D1) are obtained for the cell 1 from the dark forward bias J (V, T) data by an automated least squares variational minimisation fitting procedure described in [7,8]. Also, as mentioned above the dark forward bias current of the cell 2 features only one branch (D2), and the J (V, T) characteristics are therefore analyzed by a single diode circuit model to extract the corresponding ideality factor and saturation current density.…”
Section: Resultsmentioning
confidence: 99%
“…Similar J(V,T) characteristics were obtained for all samples and were analyzed with the help of an equivalent circuit represented by a single diode D (n, J 0 ) associated to the branch I, a parallel (R p ) and a series (R s ) resistances. The ideality factor (n) and the saturation current density (J 0 ) were determined from the dark forward bias J(V,T) data by an automated least squares variational minimisation fitting procedure described in [9,10]. For all cells, the saturation current J 0 is slightly thermally activated (Fig.…”
Section: Defects D1mentioning
confidence: 99%
“…The band gap of the CuIn(S,Se) 2 alloy can be tailored to the optimum band gap value (about 1.4-1.50 eV) for matching the solar spectrum by adjusting the S/(SþSe) ratio. 6 There are a number of film growth technologies to prepare CuIn(S,Se) 2 thin film, such as spray pyrolysis, 7,8 solution growth technique, 9 electrodeposition, [10][11][12] and two-step growth processes. 1,2,6,[13][14][15][16] From the industrial point of view, the two-step sulfurization process may be one of the best methods to prepare CuIn(S,Se) 2 thin films for solar cells.…”
Section: Introductionmentioning
confidence: 99%