Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

Abstract

Articles you may be interested inTunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 96, 112102 (2010); 10.1063/1.3360224Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.Nitrided thermal SiO 2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor Enhanced oxide breakdown progression in ultra-thin oxide silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors is observed, as compared to bulk devices. The enhanced progression is attributed to the increase of hole stress current resulting from breakdown induced channel carrier heating in a floating-body configuration. Numerical analysis of hole tunneling current and hot carrier luminescence measurement are performed to support our proposed theory. This phenomenon is particularly significant to the reliability of devices with ultra-thin oxides and low operation gate voltage.