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Enhanced hot carrier degradation in nMOSFETs with a forward substrate bias is observed. The degradation cannot be explained by conventional channel hot electron effects. Instead, an Auger recombination-assisted hot electron process is proposed. In the process, holes are injected from the forwardbiased substrate and provide for Auger recombination with electrons in the channel, thus substantially increasing channel hot electron energy. Measured hot electron gate current and the light emission spectrum provide evidence that the high-energy tail of channel electrons is increased with a positive substrate bias. The drain current degradation is about ten times more serious in forward-biased substrate mode than in standard mode. The Auger-enhanced degradation exhibits positive temperature dependence and may appear to be a severe reliability issue in high temperature operation condition.

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Articles you may be interested inOrigin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistors with accumulated back gate J. Appl. Phys. 98, 114506 (2005); 10.1063/1.2138380Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxidesemiconductor field effect transistors Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.The impact of oxide soft breakdown location on threshold voltage hysteresis in partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors with an ultrathin oxide ͑1.6 nm͒ is investigated. Two breakdown enhanced hysteresis modes are identified. In a drain-edge breakdown device, excess holes result from band-to-band tunneling flow to the floating body, thus causing threshold voltage variation in drain bias switching. In contrast, in a channel breakdown device, enhanced threshold hysteresis is observed during gate bias switching because of increased valence band electron tunneling. Our findings reveal that soft breakdown enhanced hysteresis effect can be a serious reliability issue in silicon-on-insulator devices with floating body configuration.

Articles you may be interested inTunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 96, 112102 (2010); 10.1063/1.3360224Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.Nitrided thermal SiO 2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor Enhanced oxide breakdown progression in ultra-thin oxide silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors is observed, as compared to bulk devices. The enhanced progression is attributed to the increase of hole stress current resulting from breakdown induced channel carrier heating in a floating-body configuration. Numerical analysis of hole tunneling current and hot carrier luminescence measurement are performed to support our proposed theory. This phenomenon is particularly significant to the reliability of devices with ultra-thin oxides and low operation gate voltage.