Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias

Abstract

Enhanced hot carrier degradation in nMOSFETs with a forward substrate bias is observed. The degradation cannot be explained by conventional channel hot electron effects. Instead, an Auger recombination-assisted hot electron process is proposed. In the process, holes are injected from the forwardbiased substrate and provide for Auger recombination with electrons in the channel, thus substantially increasing channel hot electron energy. Measured hot electron gate current and the light emission spectrum provide evidence that the high-energy tail of channel electrons is increased with a positive substrate bias. The drain current degradation is about ten times more serious in forward-biased substrate mode than in standard mode. The Auger-enhanced degradation exhibits positive temperature dependence and may appear to be a severe reliability issue in high temperature operation condition.

A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs

“…Interestingly, similar hot-carrier-driven interface trap generation has also been seen under simultaneous low-voltage and highcurrent stress conditions, where electric fields are not large enough to produce hot carriers. Some studies have suggested Auger generation as a candidate mechanism for hot-carrier generation under such stress conditions [3]- [6], and in [7], we provided evidence to support Auger generation as the driving mechanism. This paper expands on that previous study ( [7]) through the explanation of the role Auger recombination plays in hot-carrier degradation, comparison of the effects of mixedmode stress with high-current stress, and explanation for the different behaviors attributed to the Auger recombination seen in high-current stress using stress measurement data and calibrated TCAD simulations.…”

“…Studies of hot-carrier injection in MOSFETs have shown that Auger recombination and the similar electron-electron scattering process can contribute to hot-carrier degradation under certain conditions [6], [14]. Though it has reduced the probability of creating hot carriers with sufficient energy, the Auger generation degradation process is enhanced relative to mixed-mode degradation due to the physical location where these processes occur within the device.…”

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

“…In particular, opposite channel injection phenomena may occur [7], and, with the reduction in film thickness and fully depleted (FD) operation, coupling effects between the damage generated at the different gates [1]. More recently, with the introduction of very thin (below around 2.5 nm) SiO 2 -based gate oxides, the high gate bias regimes have been shown to suffer from enhanced HCD [8,9], what has been attributed to the impact of the EVB direct tunneling injection phenomena, where the majority carriers introduced into the floating film have been reported to be responsible for this enhanced HCD [10].…”

On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal–semiconductor Schottky gate

“…Superior performance is obtained because the twodimensional electrons (2DEG) are confined in In y Ga 1−y As QW with high mobility and saturation velocity [14,15]. On the other hand, AlGaAs-based hydrogen sensors are alternative candidates for their good performance of high detection sensitivity, fast response and widespread regimes of operating temperature and hydrogen concentration [16]. In this work, an interesting GaAs PHEMT-type hydrogen sensor with a Pd/Al 0.24 Ga 0.76 As metal-semiconductor Schottky contact structure is fabricated and studied.…”