Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping

Madani, Keeya; Rohatgi, A.; Min, Kwan Hong; Song, Hee‐eun; Huang, Ying-Yuan; Upadhyaya, Ajay; Upadhyaya, Vijaykumar; Rounsaville, Brian; Ok, Young-Woo

doi:10.1016/j.solmat.2020.110718

Cited by 9 publications

(6 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Table 1 and Figure 5, excellent boron emitter passivation has been achieved by the activation of BSG passivation in this work. The results are comparable to the state‐of‐the‐art boron emitter passivation by Al 2 O 3 ‐based passivation 29,30 and various other dielectric layers (such as TiO 2, 24 SiO x /SiN x , 33 SiON/SiN x 34 and Al 2 O 3 /SiO x 22 ) on textured surfaces and similar boron emitters, as well as the conventional thermal SiO 2 on a polished surface, 23 thereby making it a strong candidate for boron emitter passivation in device applications.…”

Section: Resultsmentioning

confidence: 53%

“…Measured J 0e as a function of boron emitter sheet resistance passivated by a BSG/SiN x /SiO x stack (this work) and compared with thermal SiO 2, 23 ALD TiO 2, 24 PEALD Al 2 O 3 /PECVD SiN x , 29 PECVD AlO x /SiN x stacks 30 . All results are on textured surfaces, except for thermal SiO 2 results which are on a polished surface…”

Section: Resultsmentioning

confidence: 99%

“…In recent years, extensive studies on boron emitter passivation with different films and deposition methods have been reported, such as by thermal SiO 2, 22,23 atomic layer deposited (ALD) TiO 2, 24 ALD Al 2 O 3, 25,26 ALD Al 2 O 3 /TiO 2 stacks, 27,28 plasma‐enhanced ALD (PEALD) Al 2 O 3 /plasma‐enhanced chemical vapor deposited (PECVD) SiN x , 29 atmospheric pressure chemical vapor deposition (APCVD) Al 2 O 3 /PECVD SiN x , 29 PECVD AlO x /SiN x , 30–32 PECVD SiO x /SiN x , 33 and PECVD SiON/SiN x . 34 However, there have been very few reports using boronsilicate glass (BSG) as a passivating film, especially on a textured surface with device applications.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Unlocking the potential of boronsilicate glass passivation for industrial tunnel oxide passivated contact solar cells

Liao

et al. 2021

Progress in Photovoltaics

View full text Add to dashboard Cite

In this work, we present a breakthrough in boronsilicate glass (BSG) passivated industrial tunnel oxide passivated contact (i‐TOPCon) solar cells. We find that a high‐temperature firing process significantly improves the front side BSG passivation quality; however, the use of such high‐temperatures is undesirable for metallization as it could lead to more junction damage by the metal paste spikes. In this study, we present a simple and industrially viable method to resolve this dilemma. With a high‐temperature industrial firing activation step to maximize the potential of BSG passivation, a low emitter saturation current (J0e) of 34 fA/cm2 has been achieved, demonstrating excellent boron emitter passivation that is comparable to state‐of‐the‐art SiO2 and Al2O3‐based passivation methods on similar structures and boron emitters. Applying this solution to cell device, the open‐circuit voltage (Voc) is improved by about 6 mV, corresponding to an absolute cell efficiency improvement of about 0.2%. Furthermore, after activating the BSG passivation, a lower temperature paste could be used at the rear side which further improves the Voc by around 3 mV. Combined together, an overall improvement of Voc close to 10 mV is achieved, propelling the cell Voc into the 690‐mV era. The effectiveness of this solution was also verified in a mass production line, with average cell efficiencies of around 23.2% (0.5% more than the baseline) and a maximum cell efficiency and Voc of 23.4% and 693 mV, respectively. This work opens new routes for further improving conventional solar cell efficiencies, in particular for BSG‐passivated TOPCon solar cells.

show abstract

Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Unlocking the potential of boronsilicate glass passivation for industrial tunnel oxide passivated contact solar cells

Liao

et al. 2021

Progress in Photovoltaics

View full text Add to dashboard Cite

show abstract

“…By ALD, controllable thickness, uniformity, composition of the film and compatibility to most substrates can be realized at the same time. Furthermore, ALD can be used to prepare ultrathin films of many materials, such as oxides, nitrides, sulfides, carbides, fluoride and even polymers [41,42]. It is noteworthy that the ALD technology is usually carried out in vacuum at relatively low temperatures, with the help of which ALD could be applied to sensitive surface but free of pinholes, cracks and defects.…”

Section: Atomic Layer Depositionmentioning

confidence: 99%

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

et al. 2021

View full text Add to dashboard Cite

Silicon-based semiconductor technology has made great breakthroughs in the past few decades, but it is reaching the physical limits of Moore's law. In recent years, the presence of two-dimensional (2D) materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties. In consideration of the widely studied hybrid integration of 2D material detectors and 3D siliconbased systems, in this paper, the basic properties of several 2D materials used in photodetectors are summarized. Subsequently, the progress in silicon photonic integrated photodetectors based on 2D materials is reviewed, followed by the summarization of the device structure and main performances. Then, the combination of some other traditional and 2D devices is discussed as a supplement. Finally, the prospective development of the hybrid 2D/3D silicon-based heterostructures is expected.

show abstract

“…In other photodiode fabrication technologies, oxides, such as MoO x and Al 2 O 3 , are used to introduce a negative fixed charge and create an inversion layer at the silicon/insulator interface [19]- [22]. Due to the insulating properties of oxides, the silicon/insulator interface is usually contacted via a doped Si region [20].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents

Knežević

Suligoj

Capan

et al. 2021

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Pure boron (PureB) deposition as the anode region of Si photodiodes creates negative fixed charge at the boron/silicon interface, which is responsible for effective suppression of electron injection from the bulk, thus ensuring low saturation/dark current densities. This mechanism is shown here to remain effective when PureB diodes, fabricated at 700 • C, are operated at cryogenic temperatures down to 100 K. Although the PureB junctions were only a few nanometers deep, they displayed the same current-voltage (I-V) characteristics as conventional deep diffused p + −n junction diodes in the whole temperature range and also maintained ideality factors close to n = 1. Al-contacting was found to reveal process-related defects in the form of anomalous high current regions giving kinks in the I-V characteristics, often only visible at low temperatures. They were identified as minute Al-Si Schottky junctions with an effective barrier height of ∼0.65 ± 0.05 eV. In PureB single-photon avalanche diodes (SPADs), Al-Si perimeter defects appeared but did not affect the breakdown voltage characteristics set by implicit guard rings. Low series resistance required thin B-layers that promoted tunneling. In particular, for such thin layers, avoiding Al-related degradation puts stringent requirements on wafer cleaning and window etch procedures.

show abstract

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping

Cited by 9 publications

References 19 publications

Unlocking the potential of boronsilicate glass passivation for industrial tunnel oxide passivated contact solar cells

Unlocking the potential of boronsilicate glass passivation for industrial tunnel oxide passivated contact solar cells

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents

Contact Info

Product

Resources

About