Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

“…It is higher than any other transparent conductive films [18]. A commercial ITO electrode has a transmittance of about 80% [1], indicating that the deposited films are suitable for display applications. However, the transmittance of the IGZO thin films in visible region reaches to 80% when oxygen is added into the deposition process.…”

“…Si-based thin-film transistors (TFTs) have been widely used as active matrix devices to drive liquid crystal displays (LCDs) [1,2]. Although the mobility of poly-silicon may be higher than 100 cm 2 V À1 s À1 , its processing temperatures are high and it will escalate the cost of TFT production [3].…”

“…InGaZnO 4 (IGZO) is a kind of transparent and amorphous oxide semiconductor which is made of ZnO [8], doped with In 2 O 3 and Ga 2 O 3 [9][10][11]. IGZO thin films are expected to become active layer materials of TFTs for the next generation display technology due to its good electrical properties, high mobility in low-temperature process, sedimentary characteristics and optical properties, which are important requirements for flat-panel display applications [1,10,12,13].…”

Metal-Semiconductor Interfaces in Thin-Film Transistors

“…Moreover, a TFT may exhibit high contact resistance effects at considered long channel values. These effects can be presented as superlinear behaviour or current crowding in output characteristics [1,11,12]. It is always desirable to have a low contact resistance; however, the channel resistance must be dominant.…”

Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films

“…Transparent amorphous indium-gallium-zinc-oxide (α-IGZO) thin film transistors (TFTs) are being considered as a replacement for conventional TFTs based on hydrogenated amorphous silicon to be used in optoelectronic device, flat panel displays, like active matrix displays, organic light-emitting diodes, and other optoelectronic device applications [1][2][3]. Advantages of α-IGZO TFTs include high electron mobility, good uniformity, high transparency in visible light, and moderate processing temperature [4][5][6][7].…”