In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical properties of MOS capacitors based on sputtering-derived HfTiO as gate dielectric on InGaAs substrate. Significant suppression of formation of Ga-O and As-O bond from InGaAs surface after deposition of ALD Al2O3 with growth cycles of 20 has been achieved. X-ray photoelectron spectroscopy (XPS) measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer. Meanwhile, increased conduction band offset and reduced valence band offset have been observed for HfTiO/Al2O3/InGaAs gate stack. Electrical measurements of MOS capacitor with HfTiO/Al2O3/InGaAs gate stacks with dielectric thickness of ∼4 nm indicate improved electrical performance. A low interface-state density of (∼1.9) × 10(12) eV(-1) cm(-2) with low frequency dispersion ( ∼ 3.52%), small border trap density of 2.6 × 10(12) cm(-2), and low leakage current of 1.17 × 10(-5) A/cm(2) at applied gate voltage of 1 V have been obtained. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitor devices with and without Al2O3 interface control layer also have been discussed in detail.
A molecular dynamics procedure is developed to search for cluster isomers and is used to study the isomer spectrum of C36 with the Brenner potential. Beginning with isolated carbon atom, the procedure quickly arrives at the D6h cage with the lowest potential and produces other 410 isomers. Among these isomers, we selected ones of typical cage, bowl, and sheet structures to calculate their free energies at 2300 K and performed molecular dynamics simulations starting either from 36 free carbon atoms diluted in He buffer gas kept at 2300 K or from the D6h cage under the same conditions, which show that the microsystem reaches a kinetic equilibrium within about 100 ns and that the isomer of the lowest free energy rather than the D6h cage of the lowest potential energy dominates in the resultant cluster.
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