Comparison of plasma etch chemistries for MgO

Baik, Kwang Hyeon; Park, P.Y.; Gila, B. P.; Shin, Jae-Ho; Abernathy, C. R.; Norasetthekul, S.; Luo, B.; Ren, F.; Lambers, E. S.; Pearton, S. J.

doi:10.1016/s0169-4332(01)00542-6

Cited by 12 publications

(9 citation statements)

References 13 publications

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“…The melting and boiling points for the Sc 2 O 3 etch products in our plasma chemistries suggest that the chlorides are more volatile than their fluoride counterparts. This fact is consistent with the observed etch rate behavior in the two plasma chemistries 155–159…”

Section: Case Studiessupporting

confidence: 90%

Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Pearton

Norton

2004

Plasma Processes & Polymers

110

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A review is given of commonly used plasma etching techniques and typical plasma chemistries for patterning electronic oxides, such as SiO 2 , HfO 2 , MgO, Sc 2 O 3 , and ZnO, polymers, and several important semiconductors (Si, GaAs, and InP). Issues that affect the reproducibility and manufacturability of etching processes, such as loading effects, endpoint detection, and etch selectivity, are also discussed. Finally, disruption to the etched surface in the form of polymer deposition, plasma residues, ion-induced displacement damage, or preferential loss of one of the lattice elements during the etch process are covered. SEM micrograph of features etched into a ZnMgO/ZnO structure using a BCl 3 /Cl 2 /Ar ICP plasma.

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Section: Case Studiessupporting

confidence: 90%

Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Pearton

Norton

2004

Plasma Processes & Polymers

110

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“…It has been shown that MgO is easily etched if the surface is in direct exposure to the plasma containing atomic hydrogen. 30 Therefore, the sharp interface still remained after plasma treatment implies that MgO can be protected by the TiNO in microwave hydrogen plasma under pressure below 5300 Pa. The XRD patterns for the etched samples B, C, D, and E also show (002) and (004) reflections of TiNO with almost unchanged d-spacing, implying that the nonetched region still remains to be TiNO.…”

Section: Resultsmentioning

confidence: 94%

Stability and etching of titanium oxynitride films in hydrogen microwave plasma

Binh

Yen

Chang

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented. V

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“…The etching product, MgF 2 , has high melting (1261 °C) and boiling points (2239 °C). This material is difficult to be made volatile as the surface prevents direct collision of Ar + ions . In this regard, the MgO phase of the nanocomposite improves the etching resistance under specific plasma environmental conditions.…”

Section: Resultsmentioning

confidence: 99%

“…We recently found that the Y 2 O 3 –MgO nanocomposite has an effect on the improvement of plasma etching resistance . So far, this material has only been of interest in military applications such as mid-infrared transparent ceramics, in which it minimizes light scattering by suppressing grain growth. − However, recent studies have revealed that MgO may improve erosion resistance under a CF 4 plasma environment. , In this regard, a plasma chamber can be used more economically by improving the etching resistance through the incorporation of inexpensive MgO instead of using Y 2 O 3 of a single composition, which is expensive and difficult to manufacture due to the high consolidation temperature. However, studies on the relationship between the microstructure and the plasma etching behavior of Y 2 O 3 –MgO nanocomposites are only just beginning.…”

Section: Introductionmentioning

confidence: 99%

Correlation with the Microstructure and Synergistic Physiochemical Etching Resistance of Nanocomposites under Fluorine-Containing Plasma Conditions

Jin

Hong

et al. 2022

ACS Appl. Mater. Interfaces

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In the semiconductor fabrication industry, high-power plasma is indispensable to obtain a high aspect ratio of chips. For applications to ceramic components including the dielectric window and ring in the semiconductor etching chamber, the Y2O3 ceramics have attracted interest recently based on excellent erosion resistance. When a high bias voltage is applied in a plasma environment containing fluorine gas, both chemical etching and ion bombardment act simultaneously on the ceramic components. During this etching process, severe erosion and particles generated on the ceramic surface can have effects on overall equipment effectiveness. Herein, we report the outstanding plasma etching resistance of Y2O3–MgO nanocomposite ceramics under a CF4/Ar/O2 gas atmosphere; the erosion depth of this material is 40–79% of that of the reference materials, Y2O3 ceramics. In a robust approach involving effective control of the microstructure with different initial particles and sintering conditions, it is possible to understand the relationship between etching behavior and microstructure evolution of the nanocomposite ceramic. The results indicate that the nanocomposite with fine and homogeneous domain distribution can decrease particle generation and ameliorate its life cycle; accordingly, this is a promising alternative candidate material for ceramic components in plasma chambers.

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Comparison of plasma etch chemistries for MgO

Cited by 12 publications

References 13 publications

Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Dry Etching of Electronic Oxides, Polymers, and Semiconductors

Stability and etching of titanium oxynitride films in hydrogen microwave plasma

Correlation with the Microstructure and Synergistic Physiochemical Etching Resistance of Nanocomposites under Fluorine-Containing Plasma Conditions

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