Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices

Holt, Joshua; Hughart, David Russell; Marinella, Matthew; Yang-Scharlotta, Jean; Cady, Nathaniel C.; Alamgir, Zahiruddin; Beckmann, Karsten; Suguitan, Nadia; Russell, Sierra; Iler, Evan; Bakhru, H.; Bielejec, Edward S.; Jacobs-Gedrim, Robin

doi:10.1109/tns.2019.2950199

Cited by 3 publications

(2 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So far, hafnium oxide-based RRAM devices, have been proven to be robust against various types of radiation including X-rays [10,11], protons [10][11][12], gamma radiation [13,14] and heavy ions [15,16]. Heavy ion irradiation studies on Ti-and Taoxide-based RRAM devices [17][18][19][20][21][22] show different behaviors for different dielectrics among irradiation and correlate changes in device resistance mainly with the creation of oxygen vacancies. For hafnium oxide, however, only few studies consider effects of heavy ion irradiation on the crystalline structure of e.g.…”

Section: Introductionmentioning

confidence: 99%

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

Vogel

Kaiser

Petzold

et al. 2021

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Hafnium oxide acts as a functional dielectric in a variety of traditional and emerging non-volatile memory technologies. To investigate the effect of heavy ion irradiation on its crystalline structure, highly textured hafnium oxide films were irradiated with 1.635 GeV Au ions of fluences ranging from 1×10 9 to 7×10 12 ions/cm 2 . For monoclinic hafnium oxide films, a fluencedependent defect-induced phase transition to a defect-stabilized tetragonal phase is identified. In low-temperature tetragonal hafnium oxide films, the XRD patterns show an out-of-plane lattice constant decrease with increasing irradiation fluence. Observed crystalline changes are strikingly similar to trends found for oxygen engineered hafnium oxide films, directly grown at varying oxidation conditions. The correlation of structural changes with in vacuo electron spectroscopy data of oxygen engineered films suggests that the irradiation of hafnium oxide leads to an oxygen loss that increases with fluence. Therefore, the underlying mechanism of the monoclinic to tetragonal phase transition is obviously directly related to oxygen defects. This new information allows predictions of device stability under swift heavy ion irradiation of hafnium oxide-based devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

Vogel

Kaiser

Petzold

et al. 2021

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…Proton irradiation induces displacement defects, which affect the behavior of charge carriers. Defects act as carrier traps, reducing the mobility and causing threshold voltage drift [30].…”

mentioning

confidence: 99%

Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory

Liu,

Cao,

Tian

et al. 2023

Electronics

View full text Add to dashboard Cite

Static random-access memory (SRAM), a pivotal component in integrated circuits, finds extensive applications and remains a focal point in the global research on single-event effects (SEEs). Prolonged exposure to irradiation, particularly the displacement damage effect (DD) induced by high-energy protons, poses a substantial threat to the performance of electronic devices. Additionally, the impact of proton displacement damage effects on the performance of a six-transistor SRAM with an asymmetric structure is not well understood. In this paper, we conducted an analysis of the impact and regularities of DD on the upset cross-sections of SRAM and simulated the single-event upset (SEU) characteristics of SRAM using the Monte Carlo method. The research findings reveal an overall increasing trend in upset cross-sections with the augmentation of proton energy. Notably, the effect of proton irradiation on the SEU cross-section is related to the storage state of SRAM. Due to the asymmetry in the distribution of sensitive regions during the storage of “0” and “1”, the impact of DD in the two initial states is not uniform. These findings can be used to identify the causes of SEU in memory devices.

show abstract

A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors

Goud,

Akkanaboina,

Machiboyina

et al. 2024

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices

Cited by 3 publications

References 39 publications

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory

A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors

Contact Info

Product

Resources

About