Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

Dominguez, Miguel A.; Pau, J. L.; Orduña-Díaz, A.; Redondo-Cubero, A.

doi:10.1016/j.sse.2019.03.032

Cited by 7 publications

(3 citation statements)

References 34 publications

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“…13 This also led to increased research activity on Zn 3 N 2 itself, including first demonstrations of Zn 3 N 2 in the field of thin film transistors (TFTs). [14][15][16][17][18][19][20][21][22] Although some band-gap studies on Zn 3 N 2 estimated values of 2.9-3.4 eV, 14,16,23,24 most of the recent studies and theoretical calculations, including photoluminescence measurements, find values in the 0.8-1.5 eV range. 10,15,[25][26][27][28][29][30][31][32][33][34][35][36][37][38] The reason for this large discrepancy lies probably in the tendency of Zn 3 N 2 to oxidize in ambient conditions, 34,39 which could lead to a strong overestimation of the band-gap energy, as masked by the presence of ZnO (with a band-gap in the order of 3.3 eV 40 ).…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

John

Khalfioui

Deparis

et al. 2021

Journal of Applied Physics

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Single-crystalline Zn 3 N 2 thin films have been grown on MgO (100) and YSZ (100) substrates by plasma-assisted molecular beam epitaxy. Depending on the growth conditions the film orientation can be tuned from (100) to (111). For each orientation, x-ray diffraction and reflection high-energy electron diffraction are used to determine the epitaxial relationships and to quantify the structural quality. Using high temperature x-ray diffraction, the Zn 3 N 2 linear thermal expansion coefficient is measured with an average of (1.5 ± 0.1) • 10 -5 K -1 in the range of 300 to 700 K. The Zn 3 N 2 films are found to be systematically n-type and degenerate, with carrier concentrations of 10 19 to 10 21 cm -3 and electron mobilities ranging from 4 to 388 cm 2 V -1 s -1 . Low-temperature Hall effect measurements show that ionized impurity scattering is the main mechanism limiting the mobility. The large carrier densities lead to measured optical band-gaps in the 1.05 eV to 1.37 eV range due to Moss-Burstein band filling, with an extrapolated value of 0.99 eV for the actual band-gap energy.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

John

Khalfioui

Deparis

et al. 2021

Journal of Applied Physics

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“…The high mobility of Zn 3 N 2 can be partly attributed to its low electron effective mass of m e * = 0.20 m 0 (where m 0 is the rest mass of electrons) at the conduction band minimum (CBM) comprising Zn 4s and N 2s states, , making it a promising active layer for TFTs. However, studies on Zn 3 N 2 TFTs are limited; they all employ ZnO capping layers on top of the Zn 3 N 2 channel layers, and their field-effect mobilities are far below the Hall mobility, as presented in Table S1. − The reason underlying the application of the top ZnO layer is not obvious; however, it is known that Zn 3 N 2 TFTs do not operate effectively in the absence of the top ZnO layer, and the reported field-effect mobilities of up to 15.8 cm 2 V –1 s –1 may be affected by the ZnO layer.…”

Section: Introductionmentioning

confidence: 99%

“…The main limitations in the device applications of Zn 3 N 2 are its high residual free electron density and natural degenerate conduction ( N e = 10 18 –10 20 cm –3 in most reports ,,− ). First-principles calculations indicate that the Fermi level is pinned at a high level by the donor impurities of O N and H i , causing unintentional natural doping .…”

Section: Introductionmentioning

confidence: 99%

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn₃N₂ Films on a Glass Substrate

Shimizu

et al. 2022

ACS Appl. Electron. Mater.

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We investigated the intrinsic physical properties of polycrystalline Zn3N2 thin films by suppressing donor impurities using the ultrahigh-vacuum sputtering technique. The residual carrier density was reduced to 4.4 × 1017 cm–3, resulting in a nondegenerate Zn3N2 thin film. In this film, we observed that grain boundary scattering had a significant effect on mobility, in contrast to previous reports on degenerate films. By fitting using the Seto model, the in-grain mobility reached 340 cm2 V–1 s–1, which is comparable to the mobility of epitaxial thin films, even though they were deposited at room temperature. Electric-double-layer transistors with nondegenerate Zn3N2 active layers were also examined to verify the potential as a transistor active layer material. The insights into trap density of polycrystalline Zn3N2 semiconductor in this report imply opportunities to explore high-performance flexible electronic devices.

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Depletion-type organic thin-film transistors based on solution-processed iron phthalocyanines fabricated on plastic substrates

2022

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Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

Cited by 7 publications

References 34 publications

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn₃N₂ Films on a Glass Substrate

Depletion-type organic thin-film transistors based on solution-processed iron phthalocyanines fabricated on plastic substrates

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Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

Cited by 7 publications

References 34 publications

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate

Depletion-type organic thin-film transistors based on solution-processed iron phthalocyanines fabricated on plastic substrates

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Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn₃N₂ Films on a Glass Substrate